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1篇 您的检索式：作者名="Boris HUDEC"

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		题名	作者	年代	出处	被引量
	1	3D resistive RAM cell design for high-density storage class memory-a review显示文摘In this article, we comprehensively review recent progress in the Re RAM cell technology for 3D integration focusing on a material/device level. First we briefly mention pioneering work on high-density crossbar Re RAM arrays which paved the way to 3D integration. We discuss the two main proposed 3D integration schemes—3D horizontally stacked Re RAM vs 3D Vertical Re RAM and their respective advantages and disadvantages. We follow with the detailed memory cell design on important work in both areas, utilizing either filamentary or interface-limited switching mechanisms. We also discuss our own contributions on Hf O2-based filamentary 3D Vertical Re RAM as well as Ta Ox/Ti O2 bilayer-based self-rectifying 3D Vertical Re RAM. Finally,we summarize the present status and provide an outlook for the nearterm future.	Boris HUDEC Chung-Wei HSU I-Ting WANG Wei-Li LAI Che-Chia CHANG Taifang WANG Karol FROHLICH Chia-Hua HO Chen-Hsi LIN Tuo-Hung HOU	2016	Science China(Information Sciences)2016，59，6：	2

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