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32篇 您的检索式：作者名="Bickermann M"

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	题名	作者	年代	出处	被引量
1	Analysis on defect generation during the SiC bulk growth process 显示文摘	HOFMANN D SCHMITT E BICKERMANN M	1999	Mater Sci Eng B1999，6162，：	2
2	On the Preparation of Vanadium Doped PVT Growth SiC Boules with High Semi-insulating Yield 显示文摘	BICKERMANN M WEINGARTNER R WINNACKER A	2003	Journal of Crystal Growth2003，254，1：	1
3	PVT Growth of Bulk A1N Crystals with Low Oxygen Contamination 显示文摘	Bickermann M Epelbaum B M Winnacker A	2003	Physica Status Solidi (c)2003，7，：	1
4	On the preparation of vanadium doped PVT growth SiCboules with high semi-insulating yield显示文摘	BICKERMANN M WEINGARTNER R WINNACKER A	2003	J of Crystal Growth2003，，：	1
5	On the preparation of vanadium doped PVT growth SiC boules with high semi-insulating yield显示文摘	BICKERMANN M WE1NGARTNER R WINNACKER A		0，，01：	1
6	On the preparation of semi-insulating SiC bulk crystals by the PVT technique显示文摘	BICKERMANN M HOFMANN D STRAUBINGER T L	2001	Applied Surface Science2001，84，1：	1
7	On the Preparation of Vanadium Doped PVT Grown SiC Boules with High Semi-insulating Yield显示文摘	Bickermann M Weingrtner R Winnacker A	2003	Journal of Crystal Growth2003，254，34：	1
8	Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation 显示文摘	Hofmann D Bickermann M Eckstein R	1999	J Cryst Growth1999，，198199：	1
9	Similarities and differences in sublimation growth of SiC and A1N 显示文摘	EPELBAUM B M BICKERMANN M NAGATA S	2007	Journal of Crystal Growth2007，305，2：	1
10	Sublimation growth of silicon carbide bulk crystals: experimental and theoretical studies on defect formation and growth rate augmentation 显示文摘	HOFMANN D BICKERMANN M ECKSTEIN R	1999	J Cryst Growth1999，，2：	1
11	Growth of 6H-SiC Crystals Along the Direction显示文摘	Herro Z G Epelbaum B M Bickermann M	2005	Journal of Crystal Grwoth2005，275，：	1
12	Analysis on Defect Generation during the SiC Bulk Growth Process显示文摘	Hofmann D Schmitt E Bickermann M	1999	Materials Science and Engineering B1999，6162，：	1
13	Wet KOH etching of freestanding AIN single crystals 显示文摘	BICKERMANN M SCHMIDT S EPELBAUM B M HEIMANN P NAGATA S WINNACKER A	2007	Journal of Crystal Growth2007，200，：	1
14	Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient显示文摘	Epelbaum B M Bickermann M	2004	Journal of Crystal Growth2004，262，14：	1
15	Absorption measurements and doping level evaluation in n-type and p-type 4H-SiC and 6H-SiC显示文摘	Bickermann M Hofmann D	2001	Materials Science Forum2001，53，：	1
16	Characterization of hulk A1N with low oxygen content显示文摘	Bickermann M Epelbaum B M Winacker A	2004	J Cryst Growth2004，，24：	1
17	显示文摘	Bickermann M Hofmann D Straubinger T L	2001	Appl Sur Sci2001，184，：	1
18	On the preparation of vanadium doped PVT growth SiC boules with high semi-insulating yield 显示文摘	BICKERMANN M WEINGARTNER R WINNACKER A	2003	Journal of Crystal Growth2003，254，1：	1
19	On the preparation of semi-insulating SiC bulk crystals by the PVT technique 显示文摘	BICKERMANN M HOFMANN D STRAUBINGER T L	2001	Applied Surface Science2001，184，1：	1
20	Preparation of Semi- Insulating Silicon Carbide by Vanadium Doping during PVT Bulk Crystal Growth显示文摘	Bickermann M Hofmann D Stranbinger T	2003	Materials Science Forum2003，43，：	1

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