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2篇 您的检索式：作者名="Andrej Kuznetsov"

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		题名	作者	年代	出处	被引量
	1	Interstitial Doping of SnO_(2) Film with Li for Indium-Free Transparent Conductor显示文摘SnO_(2)films exhibit significant potential as cost-effective and high electron mobility substitutes for In_(2)O_(3)films.In this study,Li is incorporated into the interstitial site of the SnO_(2)lattice resulting in an exceptionally low resistivity of 2.028×10^(-3)Ω·cm along with a high carrier concentration of 1.398×10^(20)cm^(-3)and carrier mobility of 22.02 cm^(2)/V·s.	陈兴谦李昊臻陈伟梅增霞 Alexander Azarov Andrej Kuznetsov 杜小龙	2024	Chinese Physics Letters2024，41，3：	0
	2	GaZn-VZn acceptor complex defect in Ga-doped ZnO显示文摘Gallium(Ga)-doped Zn O is regarded as a promising plasmonic material with a wide range of applications in plasmonics. In this study, zinc self-diffusion experiments are adopted to disclose the nature of the dominant compensating defect in Ga-doped Zn O isotopic heterostructures. The(Ga_(Zn)-V_(Zn))^- complex defect, instead of the isolated V_(Zn)^(2-), is identified as the predominant compensating acceptor center responsible for the low donor doping efficiency. The comparative diffusion experiments operated by the secondary ion mass spectrometry reveal a ~0.78 e V binding energy of this complex defect, which well matches the electrical activation energy derived from the temperature-dependent Hall effect measurements(^(0.82±0.02) e V). These findings contribute to an essential understanding of the(Ga_(Zn)-V_(Zn))^- complex defect and the potential engineering routes of heavily Ga-doped ZnO.	AiHua Tang ZengXia Mei YaoNan Hou LiShu Liu Vishnukanthan Venkatachalapathy Alexander Azarov Andrej Kuznetsov XiaoLong Du	2018	Science China(Physics,Mechanics & Astronomy)2018，61，7：	0

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