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| 1 | 在开发国家的肝炎 B 的管理显示文摘 Hepatitis B is one of the leading causes of chronic hepatitis in developing countries, with 5% to 15% of the population carrying virus. The high prevalence is due to failure to adopt appropriate measure to confine the spread of infection. Most hepatitis B patients present with advanced diseases. Although perinatal transmission is believed to be an important mode, most infections in the developing world occur in childhood and early adulthood. Factors in developing countries associated with the progression of chronic hepatitis B (CHB) include coinfections with human immunodeficiency virus, delta hepatitis virus, hepatitis C virus, alcohol intake and aflatoxin. Treatment protocols extrapolated from developed countries may need modifications according to the resources available. There is some controversy as to when to start treatment, with what medication and for how long? There is now enough evidence to support that hepatitis B patients should be considered for treatment if they show persistently elevated abnormal aminotransferase levels in the last 6 mo, checked on at least three separate occasions, and a serum hepatitis B virus DNA level of > 2000 IU/mL. Therapeutic agents that were approved by Pure Food and Drug Administration are now available in many developing countries. These include standard interferon (INF)-α, pegylatedINF-α, lamivudine, adefovir, entecavir and telbivudine. Drug resistance has emerged as a major challenge in the management of patients with CHB. The role of the universal vaccination program for effective control of hepatitis B cannot be emphasized enough. | Zaigham Abbas Adeel R Siddiqui | 2011 | World Journal of Hepatology2011，3，12： | 3 |
| 2 | Realizing high thermoelectric performance via selective resonant doping in oxyselenide BiCuSeO显示文摘Tuning the charge carrier concentration is imperative to optimize the thermoelectric(TE)performance of a material.For BiCuSeO based oxyselenides,doping efforts have been limited to optimizing the carrier concentration.In the present work,dual-doping of In and Pb at Bi site is introduced for p-type BiCuSeO to realize the electric transport channels with intricate band characteristics to improve the power factor(PF).Herein,the impurity resonant state is realized via doping of resonant dopant In over Pb,where Pb comes forward to optimize the Fermi energy in the dual-doped BiCuSeO system to divulge the significance of complex electronic structure.The manifold roles of dual-doping are used to adjust the elevation of the PF due to the significant enhancement in electrical properties.Thus,the combined experimental and theoretical study shows that the In/Pb dual doping at Bi sites gently reduces bandgap,introduces resonant doping states with shifting down the Fermi level into valence band(VB)with a larger density of state,and thus causes to increase the carrier concentration and effective mass(m*),which are favorable to enhance the electronic transport significantly.As a result,both improved ZTmax=0.87(at 873 K)and high ZTave=0.5(at 300–873 K)are realized for InyBi(1−x)−yPbxCuSeO(where x=0.06 and y=0.04)system.The obtained results successfully demonstrate the effectiveness of the selective dual doping with resonant dopant inducing band manipulation and carrier engineering that can unlock new prospects to develop high TE materials. | Yue-Xing Chen Wenning Qin Adil Mansoor Adeel Abbas Fu Li Guang-xing Liang Ping Fan Muhammad Usman Muzaffar Bushra Jabar Zhen-hua Ge Zhuang-hao Zheng | 2023 | Nano Research2023，16，1： | 1 |
| 3 | Mobility Management in Small Cell Cluster of Cellular Network显示文摘The installation of small cells in a 5G network extends the maximum coverage and provides high availability.However,this approach increases the handover overhead in the Core Network(CN)due to frequent handoffs.The variation of user density and movement inside a region of small cells also increases the handover overhead in CN.However,the present 5G system cannot reduce the handover overhead in CN under such circumstances because it relies on a traditionally rigid and complex hierarchical sequence for a handover procedure.Recently,Not Only Stack(NO Stack)architecture has been introduced for Radio Access Network(RAN)to reduce the signaling during handover.This paper proposes a system based on NO Stack architecture and solves the aforementioned problem by adding a dedicated local mobility controller to the edge cloud for each cluster.The dedicated cluster controller manages the user mobility locally inside a cluster and also maintains the forwarding data of a mobile user locally.To reduce the latency for X2-based handover requests,an edge cloud infrastructure has been also developed to provide high-computing for dedicated controllers at the edge of a cellular network.The proposed system is also compared with the traditional 3GPP architecture and other works in the context of overhead and delay caused by X2-based handover requests during user mobility.Simulated results show that the inclusion of a dedicated local controller for small clusters together with the implementation of NO Stack framework reduces the significant amount of overhead of X2-based handover requests at CN. | Adeel Rafiq Muhammad Afaq Khizar Abbas Wang-Cheol Song | 2021 | Computers, Materials & Continua2021，，10： | 0 |
| 4 | Realizing high thermoelectric performance in n-type Bi_(2)Te_(3)based thin films via post-selenization diffusion显示文摘Thermoelectric thin film has attracted a lot of attention due to its potential in fabricating micropower generator in chip sensors for internet of things(IoT).However,the undeveloped performance of n-type thermoelectric thin film limits its widely application.In this work,a facile post-selenization diffusion reaction method is employed to introduce Se into Bi_(2)Te_(3)thin films,in order to optimize the carrier transport properties.Experimental and theoretical calculation results indicate that the carrier concentration decreases and density of states increases after Se doping,leading to the enhancement of Seebeck coefficient.Further,adjusting the diffusion reaction temperature can maintain the carrier concentration while increasing the mobility simultaneously,resulting in a high power factor of 1.5 mW/(m·K^(2)),which is eight times higher than that of the pristine Bi_(2)Te_(3)thin films.Subsequently,a thin film device fabricated by the present Se-doped Bi_(2)Te_(3)thin films shows the highest output power of 60.20 nW under the temperature difference of 37 K,indicating its potential for practical use. | Yue-Xing Chen Jun-Ze Zhang Mohammad Nisar Adeel Abbas Fu Li Guang-Xing Liang Ping Fan Zhuang-Hao Zheng | 2023 | Journal of Materiomics2023，9，4： | 0 |
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