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2篇 您的检索式：作者名="Abdulmecit Turut"

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		题名	作者	年代	出处	被引量
	1	The effect of thermal treatment on the characteristic parameters of Ni/-,Ti/- and NiTi alloy/n-GaAs Schottky diodes 显示文摘	Turut Abdulmecit	1999	SolidState Electronics1999，43，：	1
	2	Influence of Al2O3 barrier on the interfacial electronic structure of Au/Ti/n-GaAs structures显示文摘The Au/Ti/n-GaAs structures with and without Al_2O_3 interfacial layer have been fabricated.The Al_2O_3interfacial layer has been formed on the GaAs substrate by atomic layer deposition.The effects of the interfacial layer on the current-voltage(I-V) and capacitance-voltage(C-V) characteristics of the devices have been investigated in the temperature range of 60-300 K.It has been seen that the carrier concentration from C-V characteristics for the MIS(metal/insulating layer/semiconductor) diode with Al_2O_3 interfacial layer has a higher value than that for the reference diode without the Al_2O_3 interfacial layer(MS).Such a difference in the doping concentration has been attributed not to doping variation in the semiconductor bulk but to the presence of the Al_2O_3 interfacial layer because both diodes have been made on the pieces cut from the same n-type GaAs wafer.The temperaturedependent I-V characteristics of the MIS diode do not obey the thermionic emission current theory because of the presence of the Al_2O_3 layer.An electron tunneling factor,aδ(x)^(1/2),value of 20.64 has been found from the I-V-T data of the MIS diode.An average value of 0.627 eV for the mean tunneling barrier height,x,presented by the Al_2O_3 layer has been obtained.	Abdulkerim Karabulut Hasan Efeoglu Abdulmecit Turut	2017	Journal of Semiconductors2017，38，5：	0

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