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您的检索式：作者名="ARUNPRABAHARAN Subramanian"
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| 1 | Metal oxide ion gated transistors based sensors显示文摘Metal oxide ion-gated transistors(MOIGTs)have garnered significant attention within the sensing domain due to their potential for achieving heightened sensitivity while consuming minimal energy across diverse scenarios.By harnessing the advantageous combination of metal oxides'high carrier mobility and facile surface customization,coupled with the potent signal amplification capabilities of ion-gated transistors,MOIGTs offer a promising avenue for discerning biomolecules,overseeing chemical reactions,p H levels,as well as facilitating gas or light determination.Over the past few decades,the MOIGT field has made remarkable strides in refining device physics,enhancing material properties,showcasing robust sensing capabilities,and broadening its application spectrum.These advancements have simultaneously unveiled new challenges and opportunities,necessitating interdisciplinary expertise to fully unlock the commercial potential of MOIGTs.In this comprehensive review,we offer a snapshot of this swiftly evolving technology,delve into its current applications,and provide insightful recommendations for future directions in the coming decade. | LI Yang YAO Yu WANG LeLe WANG LiWei PANG YunCong LUO ZhongZhong ARUNPRABAHARAN Subramanian LIU ShuJuan ZHAO Qiang | 2024 | Science China(Technological Sciences)2024，67，4： | 0 |
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