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22篇 您的检索式：作者名="ADESIDA I"

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	题名	作者	年代	出处	被引量
1	Deep level charac-teristics in n-GaN with inductively coupled plasma damage显示文摘	CHO H K KHAN F A ADESIDA I	2008	Journal of Physics:D2008，41，15：	1
2	Etching of indium tin oxide in methane/hydrogen plasmas 显示文摘	ADESIDA I BALLEGEER D G SEO J W	1991	J Vac Sci Technol1991，9，6：	1
3	Direct contact mechanism of ohmic metallization to AlGaN/GaN heterostructures via ohmic area recess etching显示文摘	Wang L Kim D Adesida I		0，，17：	1
4	High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6- based gas mixtures 显示文摘	Khan F A Adesida I	1999	Appl Phys Lett1999，75，15：	1
5	Ohmic contacts to n-type GaN using Pd/A1 metallization 显示文摘	PING A T ASIF K M ADESIDA I I	1996	Solid Elec- tronic Materials1996，25，3：	1
6	A Study of Electron Pen-etration in Solids Using a Direct Monte Carlo Approach显示文摘	Adesida I Shimizu R Everhart T E	1980	Journal of Applied Physics1980，51，11：	1
7	High rate etching of Si C using inductively coupled plasma reactive ion etching in SF6-based gas mixtures显示文摘	Khan F A Adesida I	1999	Appl Phys Lett1999，75，15：	1
8	The role of barrier layer on Ohmic performance of Ti/Al-based contact metallizations on AIGaN/GaN heterostructures显示文摘	MOHAMMED F M WANG L ADESIDA I	2006	J Appl Phys2006，100，：	1
9	Ohmic contacts to n-type GaN using Pd/Al metallization显示文摘	Ping A T Asif Khan M Adesida I	1996	Solid Electronic Materials1996，25，3：	1
10	GaN whiskers formed by selective photoenhanced wet etching of dislocations显示文摘	Youtsey C Romano L T and Adesida I	1998	Appl Phys Left1998，73，6：	1
11	Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations显示文摘	YOUTSEY C ROMANO L T ADESIDA I	1998	APL1998，73，：	1
12	A study of electron penetration in solids using a direct Monte Carlo approach显示文摘	I Adesida R Shimizu T E Everhart	1980	J Appl Phys1980，51，11：	1
13	Smooth n-type GaN surfaces by photoenhanced wet chemical etching 显示文摘	YOUTSEY C ADESIDA I ROMANO L T BULMAN G	1998	Appl Phys Lett1998，72，：	1
14	Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN显示文摘	Kim H K Adesida I Seong T Y	2004	Journal of Vacuum Science & Technology A Vacuum Surfaces & Films2004，22，4：	1
15	Dislocation-induced nonuniform interfacial reactions of Ti/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure显示文摘	WANG L MOHAMMED F M ADESIDA I	2005	Appl Phys Lett2005，87，14：	1
16	High-speed MSM/HEMT and P-I-N/HEMT monolithic photoreceivers 显示文摘	Fay P Caneau C Adesida I	2002	IEEE TransMicrow Theory Technol2002，50，1：	1
17	Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti/Al/Mo/Au metallizations on AlGaN/GaN heterostructures显示文摘	MOHAMMED F M WANG L ADESIDA I	2005	Appl Phys Lett2005，87，26：	1
18	A Study of Electron Penetration in Solids Using a Pirect Monte Carlo Approach 显示文摘	Adesida I	1980	Journal of Applied Physics1980，51，11：	1
19	Buckled and wavy ribbons of GaAs for high-performance electronics on elastomeric substrates 显示文摘	SUN Y KUMAR V ADESIDA I	2006	Adv Mater2006，18，21：	1
20	Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching显示文摘	Rittenhouse T L Bohn P W Adesida I	2003	Solid State Communications2003，126，：	1

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