| 1 | Ageing of GaN HEMT devices: which degradation indicators?显示文摘A following of diverse degradation indicators during the ageing in operational conditions of AlGa N/Ga N HEMTs(high electron mobility transistors) is proposed. Measurements of pulsed I–V, Schottky barrier height, RF output power and gate current versus output power during the early phase of the ageing test(2000 h on a 6000 h total) are presented. These preliminary results give insight on some of the principal degradation indicators that are interesting to follow during an ageing test close to operational conditions on such components. | A. Divay O. Latry C. Duperrier F. Temcamani | 2016 | Journal of Semiconductors2016，37，1： | 1 |
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