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	题名	作者	年代	出处	被引量
1	Measurements of bandgap narrowing in Si bipolar transistors 显示文摘	Slotboom J W Graaff H C De	1976	Solidstate Electronics1976，19，：	1
2	Sputtered tungsten films on polyimide on application for X-ray masks显示文摘	Ligot J Benayoun S Hantzpergue J J	1999	SolidState Electron1999，43，：	1
3	Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum显示文摘	Singubara S Okino O Sayama Y	1999	Solidstate Electronics1999，43，：	1
4	Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular beam epitaxy 显示文摘	MANDALAPU L J XIU F YANG Z	2007	SolidState Electron2007，51，7：	1
5	Latch-up effects in CMOS inverters due to high power pulsed electromagnetic interference显示文摘	Kim K Iliadis A A	2008	SolidState Electronics2008，52，10：	1
6	Superpower switch of microsecond range显示文摘	Grekhov I V Gorbatyuk A V Kostina L S	1983	SolidState Electronics1983，26，11：	1
7	Theoryof quasi-diode operation of reversely swithed dinistors显示文摘	Gorbatyuk A V Grekhov I V Nalivkin A V	1988	SolidState Electronics1988，31，10：	1
8	Tunneling devicesand applications in high fuctionality/speed digital circuits 显示文摘	MAZUMDER P	1997	SolidState Electronics1997，41，10：	1
9	Impact ionization in silicon: a review and update 显示文摘	MAES W de MEYER K van OVERSTRAETEN R	1990	SolidState Electronics1990，33，6：	1
10	The effect of thermal treatment on the characteristic parameters of Ni/-,Ti/- and NiTi alloy/n-GaAs Schottky diodes 显示文摘	Turut Abdulmecit	1999	SolidState Electronics1999，43，：	1
11	MOCVD Growth of InAsN for Infrared Applications 显示文摘	Hiroyuki Naoi Yoshiki Nazi Shiro Sake	1997	SolidState Electronics1997，41，2：	1
12	GaN epilayers grown on 100 mm diameter Si(111) substrates 显示文摘	VENUGOPAL R WAN J	2000	SolidState Electronics2000，44，：	1
13	BSIM 5: an advanced charge based MOSFET model for nanoscale VLSI circuit simulation 显示文摘	HE J XI X M WAN H	2007	SolidState Electronics2007，51，3：	1
14	Transport in the Surface Channel of Strained Si on a Relaxed Si1-xGez Substrate显示文摘	Formicone G F Vasileska D Ferry D K	1997	SolidState Electronics1997，41，6：	1
15	The impact of interface roughness scattering and degeneracy in relaxed and strained Si n-channel MOSFETs显示文摘	Watling J R Yang L Borici M	2004	Solidstate Electronics2004，48，：	1
16	A better approach to the evaluation of the series resistance of solar cells显示文摘	Rajkanan K Shewchun J	1979	SolidState Electronics1979，22，2：	1
17	1/f Noise in HgCdTe MISFETs显示文摘	Schiebel R A	1989	SolidState Electronics1989，32，11：	1
18	Blocking capability of planar devices with field limiting rings显示文摘	Brieger K P Gerlach W Pelka J	1983	Solidstate Electron1983，26，8：	1
19	Resonant-tunneling mixed-signal circuit technology 显示文摘	Seabaugh A B Brar T Broekaert F	1999	Solidstate Electronics1999，43，8：	1
20	Role of low O2 pressure and growth temperature on electrical transport PLD grown ZnO thin tfilms on si substrates 显示文摘	Ch Pandis Brilis N Tsamakis D	2006	Solidstate Electronics2006，50，1：	1

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