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17篇 您的检索式：期刊名="Microelectronicsjournal"

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		题名	作者	年代	出处	被引量
	1	CMOS-compatible temperature sensor with digital output for wide temperature range applications显示文摘	Bianchi R A Karam J M Courtois B	2000	MicroelectronicsJournal2000，31，：	1
	2	MOSFET-based temperature sensor for standard BCD smart power technology显示文摘	Miribel-Catal/~ P	2001	MicroelectronicsJournal2001，32，：	1
	3	Efficient reversible NOR gates and their mapping in optical computing domain 显示文摘	Kotiyal S Thapliyal H Ranganathan N	2014	MicroelectronicsJournal2014，45，6：	1
	4	Fabrication and application ofsilicon-reinforced PDMS masters显示文摘	Luo C Meng F Francis A	2006	MicroelectronicsJournal2006，37，10：	1
	5	Electric field-en?hanced metal-induced lateral crystallization and P-channel po?ly-Si TFTs fabricated by it显示文摘	ZENG X B WANG HJ SUN X W	2008	MicroelectronicsJournal2008，10，39：	1
	6	Anodic bonding of glass and sili-con wafers with an intermediate silicon nitride film and its appli-cation to batch fabrication of SPM tip arrays显示文摘	Hsieh G W Tsai C H Lin W C	2005	MicroelectronicsJournal2005，36，：	1
	7	Dynam- ic Thermal Modeling of a Power Integrated Circuit with the Appli- cation of Structure Functions 显示文摘	Marcin Janicki Jedrzej Banaszczyk Gilbert de Mey	2009	MicroelectronicsJournal2009，，40：	1
	8	Current conveyor filters: classification and review显示文摘	SOLIMAN A M	1996	MicroelectronicsJournal1996，29，3：	1
	9	Anewversatilebuildingblock:currentdifferencingbufferedamplifiersuitableforanalogsignal-processingfilters显示文摘	CovdetAcar SerdarOzoguz	1999	MicroelectronicsJournal1999，30，：	1
	10	A semi-theroretical relationship between the breakdown voltage of field plate edge and field plate design in planar p-nJunction terminated with finite field plate显示文摘	HEJ ZHANG X	2001	MicroelectronicsJournal2001，32，：	1
	11	Theory of a novel voltage-sustaining layer for power devices显示文摘	CHEN X B MAWBY P A BOARD K	1998	MicroelectronicsJournal1998，29，：	1
	12	A Two Electrode C-NiO Nafion Amperometric Sensor for N02 Detection显示文摘	Fort A Lotti C Mugnaini M	2009	MicroelectronicsJournal2009，40，9：	1
	13	A novel implementa-tion of the histogram - based technique for measurement ofINL of LUT-based correction of ADC 显示文摘	Kerz^rho V Bernard S Azas F	2013	MicroelectronicsJournal2013，44，9：	1
	14	Theory of a novel voltage-sustaining layer for power devices 显示文摘	Chen X B Mawby P A Board K	1998	Microelectronicsjournal1998，29，12：	1
	15	A new analytical model for optimizing SOl LDMOS with step doped drift region显示文摘	GUO Y F LI ZJ ZHANG B	2006	MicroelectronicsJournal2006，37，：	1
	16	A Process and Temperature Compensated Current Reference Circuit in CMOS Process显示文摘	Dave M Baghini M S Sharma D K	2012	MicroelectronicsJournal2012，43，2：	1
	17	Novel universal threshold logic gatebased on RTD and its application显示文摘	WEI Y SHEN J Z	2011	MicroelectronicsJournal2011，42，6：	1

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