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20篇 您的检索式：期刊名="Microelec Engineer"

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	题名	作者	年代	出处	被引量
1	Electrostatic chuck behaviour at ambient conditions显示文摘	RISSE S GUYENOT V	2002	Microelec tronic Engineering2002，6162，13：	1
2	Growth and characterization of Al2O3 gate dielectric films by low-pressure metalorganic chemical vapor deposition显示文摘	Shao Q-Y Li A-D Ling H-Q	2003	Microelecic Engineer2003，66，14：	1
3	Current SiC technology for power electronic devices beyond Si 显示文摘	MATSUNAMI H	2006	Microelec Engineer2006，83，1：	1
4	Studying of hot-carrier effect in floating body SOI MOSFETs by the transient charge pumping technique 显示文摘	NAGOGA M OKHONIN S FAZAN P	2004	Microelec Engineer2004，72，14：	1
5	Electrical characterization of SrTiO3 thin films deposited on Si (001) substrate by liquid injection MOCVD显示文摘	Legrand J Lhostis S Chang Y	2004	Microelec Engineer2004，72，14：	1
6	Effect of low-k dielectric on stress and stress-induced damage in Cu interconnects 显示文摘	PAIK J PARK H JOO Y	2004	Microelec Engineer2004，71，3：	1
7	CMOS/SOI technologies for low-power and low-volt age circuits显示文摘	PELLOIE J L RAYNAUD C FAYNOT O	1999	Microelec Engineer1999，48，14：	1
8	Study on the etching damage characteristics of PZT thin films after etching in Cl-based plasma 显示文摘	KIM K T KANG M G KIM C I	2004	Microelec Engineer2004，71，34：	1
9	Current SiC technology for powerelectronic devices beyond Si 显示文摘	MATSUNAMI H	2006	Microelec Engineer2006，83，1：	1
10	Post Cu CMP cleaning for colloidal silica abrasive removal 显示文摘	CHEN P L CHEN J H TSAI M S	2004	Microelec tronic Engineering2004，75，4：	1
11	Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors显示文摘	Lemberger M Paskaleva A	2004	Microelec Engineer2004，72，14：	1
12	Linearly-graded surface-doped SOI LDMOSFET with recessed source显示文摘	Kim H W Choi Y I Chung S K	2000	Microelec Engineer2000，5152，7：	1
13	Oxidation of GeSi显示文摘	Nicolet M A Liu W S	1995	Microelec Engineer1995，28，14：	1
14	Improved double-recessed 4H - SiC MESFETs structure with recessed source/drain drift region 显示文摘	ZHANGJP LUO X R LI Z J	2007	Microelec Engineer2007，84，12：	1
15	TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC显示文摘	STEFANAKIS D ZEKENTES K	2014	Microelec Engineer2014，116，：	1
16	Oxide degradation study during substrate hot electron injection显示文摘	Zhao S P Taylor S Eccleston W	1993	Microelec tronic Engineering1993，22，14：	1
17	Oxidation of GeSi 显示文摘	NICOLET M A LIU W S	1995	Microelec Engineer1995，28，1：	1
18	Electrical properties of epitaxial NiSi2/Si contacts with extremely flat interface formed in Ni/Ti/Si (001) system 显示文摘	NAKATSUKA O SUZUKI A SAKAI A	2006	Microelec Engineer2006，83，：	1
19	Reliability characteristics of high-k gate dielectrics HfO2 in metal-oxide semiconductor capacitors显示文摘	Han D-D Kang J-F Lin C-H	2003	Microelec Engineer2003，66，14：	1
20	Exposing extreme ultraviolet lithography at Intel显示文摘	ROBERTS J BACUITA T BRISTOL R L	2006	Microelec Engineer2006，83，49：	1

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