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	题名	作者	年代	出处	被引量
1	Low-resistance ohmic contacts to AlGaN/GaN heterostructure using Si/Ti/Al/Cu/Au multilayer metal scheme显示文摘	YOUN C J KANG K Y	2000	JJAP2000，39，7：	1
2	New high-Bs Fe-based nanocrystalline soft magnetic alloys 显示文摘	Ohta Motoki Yoshizawa Y	2007	JJAP2007，46，20：	1
3	Electron beam re- cording with a novel differential pumping head reali- zing more than 50GB/layer capacity disc显示文摘	Motohiro Furuki Minoru Takeda	2003	JJAP2003，42，2：	1
4	Gain and threshold of quantum dot lasers: Theory and comparison to experiments 显示文摘	GRUNDMANN M BIMBERG D	1997	JJAP1997，36，：	1
5	New tracking servomechanism using phase-shift differential push-pull method for recorda bleoptiacal disk 显示文摘	Tetsuo Ueyama	2004	JJAP2004，43，7：	1
6	High response twin-objective actuator with radial tilt 显示文摘	SeokJung Kim Tae Youn Heor	2005	JJAP2005，44，33：	1
7	Room temperature observation of differential negative resistance in an AlAs/GaAs/AlAs resonant tunneling diode 显示文摘	MASAHIRO T HIROYUKI S JUNJI Y	1985	JJAP1985，24，6：	1
8	Precise control of resonant tunneling current in AlAs/GaAs/AlAs double barrier diode with atom ically-controlled barrier widths 显示文摘	MASAHIRO T HIROYUKI S	1985	JJAP1985，24，6：	1
9	Time-dependent drain- and souree-series resistance of high-voltage lateral diffused metal-oxide-semiconductor field-effect transistors during hotcarrier stress 显示文摘	CHEN S H GONG J WU M C	2003	JJAP2003，42，：	1
10	Present status and prospect of Si wafers for ultra large scale integration 显示文摘	TSUYA H	2004	JJAP2004，43，7：	1
11	Low-leakage-current enhancement-mode AlGaN/GaN heterestmeture field-effect transistor using p-type gate contact显示文摘	TSUYUKUCHI N NAGAMATSU K HIROSE Y	2006	JJAP2006，45，11：	1
12	Effect of GaN microlens array on efficiency of GaN-based blue-light-emitting diodes 显示文摘	KIM D W LEE H Y CHO N G	2005	JJAP Part 22005，44，1：	1
13	p-type InGaN cap layer for normally off operatio in AlGaN/GaN heterejunction field effect transistors显示文摘	SHIMIZU M PIAO G INADA M	2008	JJAP2008，47，4：	1
14	Fabrication of gold nanodot array using anodic porous alumina as an evaporation mask显示文摘	MASUDA H SATOH M	1996	JJAP1996，35，1：	1
15	Distribution of average electric field in tris-(8-hydroxyquinoline) aluminum and 4, 4'-bis IN- (1- naphthyl)- N- phenylamino]- biphenyl- based double-layer light-emitting diodes 显示文摘	YAMADA T ROHLFING F TSUTSUI T	2000	JJAP2000，39，3：	1
16	XeCl exeimer laser annealing used to fabricate poly-Si TFTs显示文摘	SAMESHIMA T HARA M USUI S	1998	JJAP1998，28，10：	1
17	Substrate temperature dependence of transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering 显示文摘	MINAMI T SATO H IMAMOTO H	1992	JJAP1992，31，3：	1
18	Effects of Y-irradiation on color and fluorescence of pearls显示文摘	YASUNORI M	1998	JJAP Part 11998，27，2：	1
19	Impmved external efficiency ingan-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electredes显示文摘	NAKAHARA K TAMURA K SAKAI M	2004	JJAP2004，43，2：	1
20	Field aided lateral crystallization of amorphous silicon thin film 显示文摘	PARK S H JUN S I SONG K S	1999	JJAP1999，238，2：	1

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