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1594篇 您的检索式：期刊名="IEEE Trans Nucl Sci"

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	题名	作者	年代	出处	被引量
1	Comparison of the scintillation properties of LSO:Ce manufactured by different laboratories and of LGSO:Ce显示文摘	KAPUSTA MOSZYNSKI M BALCERZYK M	2000	IEEE Trans Nucl Sci2000，47，4：	2
2	The effect of emitter junction bias on the low dose rate radiation response of bipolar devices显示文摘	Pershenkov V S Maslov V B Cherepko S V	1997	IEEE Trans Nucl Sci1997，44，6：	2
3	Physical mechanism contributing to enhanced bipolar gain degradation at low dose rates显示文摘	Fleetwood D M Kosier S L Nowlin R N at al	1994	IEEE Trans Nucl Sci1994，41，6：	2
4	Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs显示文摘	Schmidt D M Fleetwood D M Schrimpf R D	1995	IEEE Trans Nucl Sci1995，42，6：	2
5	Latchup in CMOS Integrated Circuits显示文摘	Gregory BL	1973	IEEE Trans Nucl Sci1973，20，1：	2
6	A high-resolution TDC in TKO BOX system显示文摘	Sasaki O	1988	IEEE Trans on Nucl Sci1988，35，1：	2
7	Analog shaping optimization for digital processing of radiation detector signals 显示文摘	Abbiati R Geraci A	2005	IEEE Trans Nucl Sci2005，52，5：	1
8	Transient radiation upset simulations of CMOS memory circuits 显示文摘	MASSENGILL L W DIEHL S E	1984	IEEE IEEE Trans Nucl Sci1984，31，6：	1
9	Photoncounting gamma camera based on an elctron-multiplying CCD 显示文摘	DE VREE G A WESTRA A H MOODY I	2005	IEEE Trans Nucl Sci2005，52，3：	1
10	Correlation of Particle-induced Displacement Damage in Silicon显示文摘		1987	IEEE Trans on Nucl Sci1987，34，6：	1
11	Scintillation Crystals Coupled to New Large Area APDs Compared to LSO and BGO显示文摘	Pichler B J Rafecas M Schlosshauer M et al LGSO	1999	IEEE Trans Nucl Sci1999，46，3：	1
12	Digital PulseProcessor Using A Moving Average Technique显示文摘	Valentin J	1993	IEEE Trans Nucl Sci1993，40，4：	1
13	Total-dose failure mechanisms of integrated circuits in laboratory and space environments显示文摘	Winokur P S Sexton F W Hash G L	1987	IEEE Trans Nucl Sci1987，34，6：	1
14	Latchup elimination in bulk CMOS LSI circuits显示文摘	Schroeder J E	1980	IEEE Trans Nucl Sci1980，27，6：	1
15	The impact of ASIC devices on the SEU vulnerability of space-borne computers显示文摘	Koga R Crain W R Crawford K B	1992	IEEE Trans Nucl Sci1992，39，6：	1
16	A quantitative reconstruction from truncated projections in classical tomography 显示文摘	Clackdoyle R Noo F Guo Junyu	2004	IEEE Trans Nucl Sci2004，51，3：	1
17	Trends in total-dose respor/se of modern bipolar transistors显示文摘	NOWLIN R N ENLOW E W SCHRIMPF R D	1992	IEEE Trans Nucl Sci1992，39，6：	1
18	Possible emittance increase through filamentation due to space charge in continuous beam显示文摘	Lapostoile P M	1971	IEEE Trans on Nucl Sci1971，18，3：	1
19	Digital single e- vent transient trends with technology node scaling显示文摘	Benedetto J Eaton P Mavis D	2006	IEEE Trans Nucl Sci2006，53，6：	1
20	Single event error immune CMOS RAM 显示文摘	ANDREWS J L SCHROEDER J E GINGERICH BL	1982	IEEE Trans Nucl Sci1982，29，6：	1

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