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23篇 您的检索式：期刊名="IEEE Trans Elee Dev"

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	题名	作者	年代	出处	被引量
1	Device scaling effects on hot-carrier induced interfaceand oxide-trapped charge distributions in MOSFET' s 显示文摘	MAHAPATRA S PARIKH C D RAO V R	2000	IEEE Trans Elee Dev2000，47，1：	1
2	An overview of smart power technology 显示文摘	BALIGA B J	1991	IEEE Trans Elee Dev1991，38，7：	1
3	An overview of smart power technology 显示文摘	BALIGA B J	1991	IEEE Trans Elee Dev1991，38，7：	1
4	Characteristics of a high-current, high-voltage Shockley diode 显示文摘	SCHROEN W H	1970	IEEE Trans Elee Dev1970，17，9：	1
5	Effects of the inversion-layer centroid on the performance of double-gate MOSFETs显示文摘	Lopez-Villanueva J A Cartujo-Cassinello P Gamiz F	2000	IEEE Trans Elee Dev2000，47，1：	1
6	Hot-carrier degradation in bipolar transistors at 300 K and 110 K-effect on BiCMOS inverter performance 显示文摘	Burnett J D Hu C-M	1990	IEEE Trans Ele Dev1990，17，3：	1
7	Current gain collapse in microwave multi-finger heterojunction bipolar transistors operated at very high power densities 显示文摘	LIU W STEVE N HILL D G	1993	IEEE Trans Elee Dev1993，40，11：	1
8	Junction degradation in bipolar transistors and the reliability imposed constraints to scaling and design显示文摘	Tang D D-L Hackbarth E	1988	IEEE Trans Ele Dev1988，35，12：	1
9	Current gain increase of n-p-n transistors by electromigration of atomic hydrogen in emitter polysilicon 显示文摘	ZHAO J	1990	IEEE Trans Elee Dev1990，37，7：	1
10	Correction to 'optimization of the specific on-resistance of the COOLMOS/supTM/'显示文摘	Sin J K O	2001	IEEE Trans Elee Dev2001，486，：	1
11	Current gain collapse in microwave multifinger heterojunction bipolar transistors 显示文摘	LIU W NELSON S HILL D	1993	IEEE Trans Elee Dev1993，40，11：	1
12	Charge pumping in MOS devices 显示文摘	BRUGLER J S JESPERS P G A	1969	IEEE Trans Elee Dev1969，16，3：	1
13	Optimum base doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration 显示文摘	Kunihiro S	2001	IEEE Trans Elee Dev2001，48，9：	1
14	Modeling of the steady state and switching characteristics of a normally off 4H-SiC trench bipolar-mode FET 显示文摘	PEZZIMENTI F	2013	IEEE Trans Elee Dev2013，60，4：	1
15	'Linear kink effect' induced by electron valence band tunneling in ultrathin gate oxide bulk and SOI MOSFETS 显示文摘	MERCHA A RAFI J M SIMOEN E	2003	IEEE Trans Elee Dev2003，50，7：	1
16	Electron mobility models for 4H , 6H , and 3C SiC 显示文摘	ROSCHKE M SCHWIERZ F	2001	IEEE Trans Elee Dev2001，48，8：	1
17	A unified approach to RF and microwave noise parameter modeling in bipolar transistors 显示文摘	Niu G Cressler J D Zhang S	2001	IEEE Trans Elee Dev2001，48，11：	1
18	A comparative analysis of the dynamic behavior of BTG SOI MOSFET's and circuits with distributed body resistance显示文摘	Workman G O Fossum J G	1998	IEEE Trans Ele Dev1998，45，10：	1
19	Impact of the vertical SOI 'DELTA' structure on planar device technology 显示文摘	Hisamoto D Kaga T Takeda E	1991	IEEE Trans Elee Dev1991，38，6：	1
20	Modeling of on-resistance of LDMOS and VDMOS power transistors 显示文摘	SUN S C PLUMMER J D	1995	IEEE Trans Elee Dev1995，42，43：	1

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