Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

查看全文 作　　者：QI [1]JunLei;ZHANG [1]LiXia;CAO [1]Jian;ZHENG [2]WeiTao;WANG [2]Xin;FENG [1]JiCai

机构地区：[1]State Key Laboratory of Advanced Welding and Joining, Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;[2]Department of Materials Science, Key Laboratory of Mobile Materials, Ministry of Education, and State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China

出　　处：《Chinese Science Bulletin》索引2012年第57卷第23期,共5页

基　　金：supported by the National Natural Science Foundation of China(51105108);the Fundamental Research Funds for the Central Universities(HIT.NSRIF.2010113and2010115);the Foundation of the Key Laboratory for Advanced Materials Processing Technology,Ministry of Education(2010007) 摘　　要：Large-area single-or multilayer graphene of high quality is synthesized on Ni films by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) at a relatively low temperature (650℃).In the deposition process,a trace amount of CH4 gas (2-8 sccm (sccm denotes standard cubic centimeter per minute at STP)) is introduced into the PECVD chamber and only a short deposition time (30-60 s) is used.Single-or multilayer graphene is obtained because carbon atoms from the discharging CH4 diffuse into the Ni film and then segregate out at its surface.The layer number of the obtained graphene increases when the deposition time or CH4 gas flow rate is increased.This investigation shows that PECVD is a simple,low-cost,and effective technique to synthesize large-area single-or multilayer graphene,which has potential for application as electronic devices. 关键词：GRAPHENE ,PECVD, large-area,CH4, plasma—enhanced

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Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

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