AlGaInAs multi-quantum wells ring laser with optical coupling waveguides

查看全文 作　　者：LI [1]XianJie;QI [1]LiFang;GUO [2]WeiLian;YU [2]JinLong;ZHAO [1]YongLin;CAI [1]DaoMin;YIN [1]ShunZheng;MAO [2]LuHong

机构地区：[1]13th Institute of China Electronic Technology Group Corporation, Shijiazhuang 050051, China;[2]School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

出　　处：《Chinese Science Bulletin》索引2009年第54卷第20期,共4页

基　　金：Supported by the National Natural Science Foundation of China (Grant No.60706035);National Basic Research Program of China (Grant No. 2003CB314901) 摘　　要：Based on InAlGaAs multi-quantum wells epitaxy structure for Fabry-Pero laser diode,a multi-quantum wells semiconductor ring laser is realized using ICP dry etching process and polyimide planarization process.The laser is generated in a semiconductor resonator ring and is output by two coupled integrated bus waveguides.The ring diameter is 700 μm and the width of the waveguide is 3 μm.The output optical power-current(P-I) characteristic and the wavelength spectra of the ring laser are measured using a fiber coupled to the cleaved facet of the bus waveguide.The threshold current of the device is 120 mA and the wavelength is 1602 nm at an injected current of 160 mA.In addition,the operation mode for the laser in the resonator ring is roughly discussed based on the P-I characteristic plot. 关键词：波导激光器多量子阱量子阱半导体激光器耦合环光学输出电流耦合波导激光波长

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AlGaInAs multi-quantum wells ring laser with optical coupling waveguides

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