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| 1 | 电化学染料增感对聚苯胺/硅异质结电池的影响显示文摘采用电化学氧化聚合染料增感方法,利用有机染料直接耐晒翠兰对太阳电池顶区材料聚苯胺进行了有机染料增感研究,制备出了Al栅/DS-PAn/n-Si/Al结构的染料增感聚苯胺/硅异质结太阳电池·研究表明,染料增感可使聚苯胺在光照射下光生载流子明显增强,较大幅度地改善聚苯胺的可见光谱响应;J-V特性表明,电池二极管的曲线因子约为6.3,p-n结的潜在势垒高度为0.89eV;与未增感的PAn/n-Si异质结太阳电池相比,染料增感的DS-PAn/n-Si异质结太阳电池的短路电流和转换效率得到了较大提高,在37.2W/m2的光照射下,经染料增感的电池短路电流较增感前提高了约6倍,填充因子可达57%,转换效率达1.42%· | 郑建邦 任驹 郭文阁 赵建林 | 2006 | 光子学报2006，35，1： | 1 |
| 2 | Influences of Low Energy Ion Implantation onProperties of Polyaniline/Si Heterojunction Solar Cells显示文摘Ion implantation may favorably modify the properties of polyaniline/Si heterojunction solar cells fabricated by the electrochemical method. Influences of the implantation on the absorption spectrum and the thermal stability were discussed and output properties were measured. The results show that the absorption spectrum of the polyaniline films modified by ion implantation is much wider; its pyrolytic temperature increases by 40℃, and the polyaniline/Si cell efficiency increases 18 and 3 times under the illumination of (10.92) and 37.2W/m2, respectively. | WUChang-jiang ZHENGJian-bang LIEn-pu | 2005 | Semiconductor Photonics and Technology2005，11，1： | 0 |
| 3 | Characteristics of Polyaniline/Si Heterojunction Solar Cell By Electrochemical Dye Sensitization显示文摘Using the electrochemical polymerization dye sensitization(ECDS) method, polyaniline(PAn), which is used as top region material in solar cells, is sensitized with direct blue dye(DS), and sensitized Al grid/DS-PAn/n-Si/Al heterojunction solar cells is prepared by ECDS. Influences of the ECDS on the absorption spectrum and the junction characteristics of the solar cell were discussed, and the output characteristics were measured. The results show that the absorption spectrum of the sensitized PAn films is much wider and stronger in Vis-range; the diode quality factor is about 6.3 and the height of latent barrier potential of p-n junction is 0.89eV; the short-circuit current and the conversion efficiency of sensitized DS-PAn/Si heterojunction solar cells are greatly improved, which the short-circuit current can increase 6 times, the fill factor is 57% and the efficiency can reach 1.42% under the illumination of 37.2W/m^2, respectively. | ZHENG Jian-bang REN Ju HOU Chao-qi | 2005 | Semiconductor Photonics and Technology2005，11，4： | 0 |
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