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		题名	作者	年代	出处	被引量
	1	Piezoresistive Sensors Based on Carbon Nanotube Films显示文摘Piezoresistive effect of carbon nanotube films was investigated by a three-point bending test. Carbon nanotubes were synthesized by hot filament chemical vapor deposition. The experimental results showed that the carbon nanotubes have a striking piezoresistive effect. The relative resistance was changed from 0 to 10.5×10-2 and 3.25×10-2 for doped and undoped films respectively at room temperature when the microstrain under stress from 0 to 500. The gauge factors for doped and undoped carbon nanotube films under 500 microstrain were about 220 and 67 at room temperature, respectively, exceeding that of polycrystalline silicon (30) at 35℃. The origin of the resistance changes in the films may be attributed to a strain-induced change in the band gap for the doped tubes and the defects for the undoped tubes.	LuJian-wei WANGWan-lu LIAOKe-jun WANGYong-tian LIUCHang-lin ZengQing-gao	2005	Semiconductor Photonics and Technology2005，11，1：	0
	2	Synthesis of metal oxide composite nanosheets and their pressure sensing properties显示文摘This study presents the synthesis of metal oxides composite nanosheets(oxides of cobalt, zinc and iron) and their pressure sensing properties. A transducer has been fabricated to directly measure the resistance–pressure and impedance–pressure relationships of pristine nanopowder. At the initial stage, a nanopowder sample of 10 mm diameter and 1 mm height was placed in the transducer and by applying pressure of up to 8.15 kN/m2;the DC resistance and the impedance are reduced by 44% on average. It can be explained by the densification of the samples and a decrease in porosity due to the effect of pressure. It was also observed that the DC resistance increases with time and saturated within 8 min. It is considered that this phenomenon is based on the effect of displacement currents of bound charges. The dependences of the impedance phase(θ) on frequency and pressure have also been investigated.	Muhammad Tariq Saeed Chani Sher Bahadar Khan Kh.S.Karimov M.Abid Abdullah M.Asiri Kalsoom Akhtar	2015	Journal of Semiconductors2015，36，2：	0

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