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| 1 | Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes显示文摘AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy bandgap.AlGaN-based devices have extensive appli-cability owing to their stable physico-chemical properties.With decades of research effort,significant progress has been achieved in enhancing the working efficiency of AlGaN-based LEDs by optimizing the crystalline qual-ity,doping efficiency,and device design.In this review,methods to obtain high-quality AlGaN-based materials,achieve high doping efficiency,and design UV-LED structures are summarized and discussed.Finally,the issues that need to be addressed in AlGaN-based UV-LED devices are highlighted. | Yuxuan Chen Jianwei Ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li | 2021 | Fundamental Research2021，1，6： | 3 |
| 2 | 深紫外LED的外延技术进展显示文摘深紫外LED(UVC LED)是新型紫外线光源,可应用于病毒消杀、工业、通信等领域。近年来,AlGaN基UVC LED的外延技术取得了显著的发展,器件性能不断提升,展现出了良好的应用前景。本文综述了UVC LED外延技术的研究进展,主要介绍衬底、外延工艺与外延结构对UVC LED光电性能的影响。 | 杨浩 杨鸿志 高涛 郭伟杰 覃国恒 | 2022 | 中国照明电器2022，，7： | 1 |
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