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| 1 | A Review of WBG and Si Devices Hybrid Applications显示文摘In recent years,next-generation power semiconductor devices,represented by silicon carbide(SiC)and gallium nitride(GaN),have gradually emerged.Because wide-bandgap(WBG)devices have better electrical characteristics than those of silicon(Si)based devices,they have attracted increased attention both from academic researchers and industrial engineers.Employing WBG devices will further improve the efficiency and power density of power converters.However,the current price of WBG devices remains extremely high.Thus,some researches have focused on the hybrid utilization of WBG devices and Si-based devices to achieve a tradeoff between the performance and cost.To summarize the current research on WBG/Si hybrid applications,the issues mentioned above with representative research approaches,results,and characteristics,are systematically reviewed.Finally,the current research on WBG/Si hybrid applications and their future trends are discussed. | Li Zhang Zhongshu Zheng Xiutao Lou | 2021 | Chinese Journal of Electrical Engineering2021，7，2： | 0 |
| 2 | 一种两级式宽范围输入的高位取能电源设计显示文摘介绍了一种用于模块化多电平换流器(Modular Multilevel Converter,MMC)的宽范围输入高位取能电源设计方法,根据电源高电压、宽范围输入和多路小功率输出的特点,电源采用两级式结构。第一级源变换器采用输入串联输出并联(Input-Series Output-Parallel,ISOP)的反激拓扑,主要实现降压功能;第二级负载变换器采用三路单独的反激电路,保证精准调压。在此基础上,设计了一台输入电压DC 400~3 500 V、输出电压DC 15 V/15 V/400 V的高位取能电源样机。通过最高输入电压下开关管源漏极电压波形和不同负载下输出电压波形,证明了该设计方案可在宽输入范围内可靠运行,有效地减小了单个开关管所承受的电压应力并且具有优良的带载性能。 | 朱一昕 孙庆祝 陈宇杰 毕恺韬 | 2024 | 电子设计工程2024，32，5： | 0 |
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