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1F-containing cations improve the performance of perovskite solar cells显示文摘Organic–inorganic halide perovskite solar cells(PSCs)have delivered power conversion efficiency(PCE)on par with that of crystalline silicon solar cells,due to the considerable effort on the optimization of perovskite materials and devices[1].The three-dimensional(3D)perovskite-based PSCs with the standard n–i–p architecture gave a certified PCE of25.5%[2].However,the poor device stability under operating conditions remains an obstacle to commercialization.The 3D hybrid perovskite materials are susceptible to oxygen,UV light,humidity,heat,and electric fields[3].To improve device stability,two main strategies are applied:(1)improving the intrinsic stability[4];(2)providing sufficient protection.Qin Zhou Chuantian Zuo Zilong Zhang Peng Gao Liming Ding 2022Journal of Semiconductors2022,43,1:1
2Stabilizing black-phase CsPbI_(3) under over 70% humidity显示文摘Recently,all-inorganic perovskites have attracted attention due to good thermal stability[1−12].Among them,CsPbI3 has the most desirable optical bandgap(~1.7 eV)for applications in optoelectronic devices[13−16].In general,making black-phase CsPbI3 film requires a high-temperature annealing up to 320℃[17,18],which inevitably raises energy consumption.Though being made at high temperature,the resulting black-phase(αorβphase)CsPbI3 film still suffers from an un-desirable phase transition under ambient conditions[19,20].Sev-eral strategies have been developed to lower the annealing temperature(90-100℃)[20−26],it is still challenging to stabilize black-phase CsPbI3 under ambient condition with high humidity and without a tedious annealing process.Herein,we developed a simple crystal redissolution(CR)strategy to make stable black-phase CsPbI3 film in ambient air with high humidity and without post-annealing.4-N,N-dimethylamino-4ʹ-Nʹ-methyl-stilbazolium tosylate(DAST)can chemically interact with CsPbI3 to reduce the formation energy of black-phase and inhibit CsPbI3 to undergo black-to-yellow phase transition.Tian Tian Meifang Yang Jianyu Yang Wuqiang Wu Liming Ding 2022Journal of Semiconductors2022,43,3:0
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