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| 1 | Application of metal halide perovskite photodetectors显示文摘In recent years,metal halide perovskite materials have attracted wide attention in the fields of photovoltaics(PVs),light-emitting diodes(LEDs)and photodetectors(PDs)due to their excellent light absorption[1-6],adjustable bandgaps and long carrier diffusion length.Compared with commercial Si and GaN photodetectors,perovskite photodetectors(PPDs)present wider light detection range,higher sensitivity and higher external quantum efficiency(EQE)[7-9]. | Xiyan Pan Liming Ding | 2022 | Journal of Semiconductors2022，43，2： | 1 |
| 2 | Defect Passivation on Lead-Free CsSnI_(3) Perovskite Nanowires Enables High-Performance Photodetectors with Ultra-High Stability显示文摘In recent years,Pb-free CsSnI_(3) perovskite materials with excellent photoelectric properties as well as low toxicity are attracting much atten-tion in photoelectric devices.However,deep level defects in CsSnI_(3),such as high density of tin vacancies,structural deformation of SnI_(6)−octahedra and oxidation of Sn^(2+)states,are the major challenge to achieve high-performance CsSnI_(3)-based photoelectric devices with good stability.In this work,defect passivation method is adopted to solve the above issues,and the ultra-stable and high-performance CsSnI_(3) nanowires(NWs)photodetectors(PDs)are fabricated via incorporating 1-butyl-2,3-dimethylimidazolium chloride salt(BMIMCl)into perovskites.Through materials analysis and theoretical calculations,BMIM+ions can effectively passivate the Sn-related defects and reduce the dark current of CsSnI_(3) NW PDs.To further reduce the dark current of the devices,the polymethyl methacrylate is introduced,and finally,the dual passivated CsSnI_(3) NWPDs show ultra-high performance with an ultra-low dark current of 2×10^(-11) A,a responsivity of up to 0.237 A W^(−1),a high detectivity of 1.18×10^(12) Jones and a linear dynamic range of 180 dB.Furthermore,the unpackaged devices exhibit ultra-high stability in device performance after 60 days of storage in air(25℃,50% humidity),with the device performance remaining above 90%. | Zheng Gao Hai Zhou Kailian Dong Chen Wang Jiayun Wei Zhe Li Jiashuai Li Yongjie Liu Jiang Zhao Guojia Fang | 2022 | Nano-Micro Letters2022，14，12： | 1 |
| 3 | 准三维纳米结构p-ZnO:Fe/n-GaN基自驱动紫外光电探测器显示文摘采用化学气相沉积(CVD)法成功制备了p-ZnO:Fe/n-GaN准三维纳米结构,并基于p-ZnO:Fe/n-GaN异质结制备了高性能的自驱动紫外光电探测器。微结构研究结果表明:Fe元素成功掺入ZnO纳米结构,使其转化为p型半导体。室温光致发光谱紫外光发射峰红移,表明p-ZnO:Fe纳米结构中形成了浅受主能级缺陷。由于p-n结的光伏效应,紫外光电探测器展示出自驱动响应特性。ZnO的p型掺杂造成的电荷传输距离缩短及其独特的准三维纳米结构,使得探测器展示出高的开关比和快速响应特性。在零偏压和-1 V偏压下,紫外光电探测器的电流开关比分别为58.3和92.0,上升和回复时间均小于10 ms。该高性能紫外光电探测器的成功研制可为纳米级光电开关的制备提供理论思路和技术指导。 | 李海霞 王宇 林威威 刘冰怡 张中原 刘阳 | 2021 | 武汉工程大学学报2021，43，3： | 0 |
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