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| 1 | Wafer-scale vertical van der Waals heterostructures显示文摘Wafer-scale van der Waals heterostructures(vdWHs),benefitting from the rich diversity in materials available and stacking geometry,precise controllability in devices structure and performance,and unprecedented potential in practical application,have attracted considerable attention in the field of twodimensional(2D)materials.This article reviews the state-of-the-art research activities that focus on wafer-scale vdWHs and their(opto)electronic applications.We begin with the preparation strategies of vdWHs with wafer size and illustrate them from four key aspects,that is,mechanical-assembly stack,successive deposition,synchronous evolution,and seeded growth.We discuss the fundamental principle,underlying mechanism,advantages,and disadvantages for each strategy.We will then review the applications of large-area vdWHs based devices in electronic,optoelectronic and flexible devices field,unveiling their promising potential for practical application.Ultimately,we will demonstrate the challenges they face and provide some viable solutions on waferscale heterostructure synthesis and device fabrication. | Lixin Liu Tianyou Zhai | 2021 | InfoMat2021，3，1： | 5 |
| 2 | Dissolution-precipitation growth of uniform and clean two dimensional transition metal dichalcogenides显示文摘Two dimensional transition metal dichalcogenides(TMDCs)have attracted much interest and shown promise in many applications.However,it is challenging to obtain uniform TMDCs with clean surfaces,because of the difficulties in controlling the way the reactants are supplied to the reaction in the current chemical vapor deposition growth process.Here,we report a new growth approach called’dissolution-precipitation’(DP)growth,where the metal sources are sealed inside glass substrates to control their feeding to the reaction.Noteworthy,the diffusion of metal source inside glass to its surface provides a uniform metal source on the glass surface,and restricts the TMDC growth to only a surface reaction while eliminating unwanted gas-phase reaction.This feature gives rise to highly uniform monolayer TMDCs with a clean surface on centimeter-scale substrates.The DP growth works well for a large variety of TMDCs and their alloys,providing a solid foundation for the controlled growth of clean TMDCs by the fine control of the metal source. | Zhengyang Cai Yongjue Lai Shilong Zhao Rongjie Zhang Junyang Tan Simin Feng Jingyun Zou Lei Tang Junhao Lin Bilu Liu Hui-Ming Cheng | 2021 | National Science Review2021，8，3： | 2 |
| 3 | Synergistic-engineered van der Waals photodiodes with high efficiency显示文摘Van der Waals(vdW)heterostructures based on two-dimensional transitionmetal dichalcogenides have provided unprecedented opportunities for photovoltaic detectors owing to their strong light-matter interaction and ultrafast interfacial charge transfer.Despite continued advancement,insufficient control of photocarrier behaviors still limits the external quantum efficiency(EQE)and operation speed of such detectors.Here,we propose a synergistic strategy of contact-configuration design and thickness-modulation to construct high-performance vdW photodiodes based on the typical type II heterostructure(MoS2/WSe2).Through integrating three contact architectures into one device to exclude other factors,we solid the superiority of designed 1L-MoS2/WSe2/graphene heterostructures incorporating efficient photocarrier collection and gate modulation.Together with leveraging the layer-numberdependent properties of WSe2,we observe the critical thickness of WSe2(11 layers)for the highest EQE,which verifies the thickness-dependent competition between photocarrier generation,dissociation,and collection.Finally,we demonstrate the synergistic-engineered vdW heterostructure can trigger record-high EQE(61%)and manifest ultrafast photoresponse(4.1μs)at the atomically thin limit(8 nm).The proposed strategy enables architecture-design and thickness-engineering to unlock the potential to realize high-performance optoelectronic devices. | Baishan Liu Xiankun Zhang Junli Du Jiankun Xiao Huihui Yu Mengyu Hong Li Gao Yang Ou Zhuo Kang Qingliang Liao Zheng Zhang Yue Zhang | 2022 | InfoMat2022，4，3： | 1 |
| 4 | High performance IEICO-4F/WSe_(2)heterojunction photodetector based on photoluminescence quenching behavior显示文摘Heterostructure is the basic building block for functional optoelectronic devices.Heterostructures consisting of two-dimensional(2D)transition metal dichalcogenides(TMDs)and organic semiconductors are currently attracting great interest for highperformance optoelectronics.However,how to design heterostructure for highly efficient optoelectronic devices remains a big challenge.Here we design high-performance organic semiconductor/WSe_(2)heterostructure photodetectors by tailoring the charge transfer effect between 2,2ʹ-((2Z,2ʹZ)-(((4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydros-indaceno[1,2-b:5,6-bʹ]dithiophene-2,7-diyl)bis(4-((2-ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-difluoro-3-oxo-2,3-dihydro-1H-indene-2,1-diylidene))dimalononitrile(IEICO-4F)organic semiconductors with various thicknesses and monolayer WSe_(2).With the increase of IEICO-4F layer thickness,the photoluminescence(PL)characteristics of WSe_(2)could be completely quenched due to the charge transfer from the lowest unoccupied molecular orbital(LUMO)level of IEICO-4F to the conduction band minimum(CBM)of WSe_(2).Benefiting from the exquisite charge transfer behavior,the IEICO-4F/WSe_(2)heterojunction photodetector with optimized 6.0-nm thick IEICO-4F shows high performance including the responsivity of 8.32 A/W and specific detectivity of 4.65×10^(11)Jones at incident light of 808 nm.This work demonstrates a simple approach based on PL characteristics to design high-performance IEICO-4F/WSe_(2)heterojunction,thus paving the way for the development of excellent optoelectronic devices based on organic/TMD heterostructures. | Qinghai Zhu Yexin Chen Tianyi Chen Lijian Zuo Yijun Sun Rong Wang Mingsheng Xu | 2022 | Nano Research2022，15，9： | 0 |
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