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| 1 | Optical information processing using dual state quantum dot lasers: complexity through simplicity显示文摘We review results on the optical injection of dual state InAs quantum dot-based semiconductor lasers.The two states in question are the so-called ground state and first excited state of the laser.This ability to lase from two different energy states is unique amongst semiconductor lasers and in combination with the high,intrinsic relaxation oscillation damping of the material and the novel,inherent cascade like carrier relaxation process,endows optically injected dual state quantum dot lasers with many unique dynamical properties.Particular attention is paid to fast state switching,antiphase excitability,novel information processing techniques and optothermally induced neuronal phenomena.We compare and contrast some of the physical properties of the system with other optically injected two state devices such as vertical cavity surface emitting lasers and ring lasers.Finally,we offer an outlook on the use of quantum dot material in photonic integrated circuits. | Bryan Kelleher Michael Dillane Evgeny A.Viktorov | 2021 | Light(Science & Applications)2021，10，12： | 2 |
| 2 | Impact of carrier transport on the performance of QD lasers on silicon:a drift-diffusion approach显示文摘The operation of quantum dot lasers epitaxially grown on silicon is investigated through a quantum-corrected Poisson-drift-diffusion model.This in-house developed simulation framework completes the traditional rate equation approach,which models the intersubband transitions involved into simultaneous ground-state and excited-state lasing,with a physics-based description of carrier transport and electrostatic effects.The code is applied to look into some of the most relevant mechanisms affecting the lasing operation.We analyze the impact of threading dislocations on non-radiative recombination and laser threshold current.We demonstrate that asymmetric carrier transport in the barrier explains the ground-state power quenching above the excited-state lasing threshold.Finally,we study p-type modulation doping and its benefits/contraindications.The observation of an optimum doping level,minimizing the ground-state lasing threshold current,stems from the reduction of the electron density,which counteracts the benefits from the expected increase of the hole density.This reduction is due to electrostatic effects hindering electron injection. | MARCO SALDUTTI ALBERTO TIBALDI FEDERICA CAPPELLUTI MARIANGELA GIOANNINI | 2020 | Photonics Research2020，8，8： | 1 |
| 3 | Recent Progress in Heterogeneous Ⅲ-Ⅴ-on-Silicon Photonic Integration显示文摘Silicon(Si)photonics is a disruptive technology on the fast track to revolutionise integrated photonics.An indispensable branch thereof,heterogeneous Si integration,has also evolved from a science project 15 years ago to a growing business and compelling research field today.We focus on the scope of Ⅲ-Ⅴ compound semiconductors heterogeneously integrated on Si substrates.The commercial success of massively produced integrated optical transceivers based on first-generation innovation is discussed.Then,we review a number of technological breakthroughs at the component and platform levels.In addition to the numerous new device performance records,our emphasis is on the rationale behind and the design principles underlying specific examples of materials and device integration.Finally,we offer perspectives on development trends catering to the increasing demand in many existing and emerging applications. | Di Liang John E.Bowers | 2021 | Light(Advanced Manufacturing)2021，2，1： | 1 |
| 4 | Dynamic performance and reflection sensitivity of quantum dot distributed feedback lasers with large optical mismatch显示文摘This work reports on a high-efficiency In As/Ga As distributed feedback quantum dot laser.The large optical wavelength detuning at room temperature between the lasing peak and the gain peak causes the static,dynamic,and nonlinear intrinsic properties to all improve with temperature,including the lasing efficiency,the modulation dynamics,the linewidth enhancement factor,and consequently the reflection insensitivity.Results reported show an optimum operating temperature at 75°C,highlighting the potential of the large optical mismatch assisted single-frequency laser for the development of uncooled and isolator-free high-speed photonic integrated circuits. | BOZHANG DONG JIANAN DUAN HEMING HUANG JUSTIN CNORMAN KENICHI NISHI KEIZO TAKEMASA MITSURU SUGAWARA JOHN EBOWERS FRéDéRIC GRILLOT | 2021 | Photonics Research2021，9，8： | 1 |
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