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| 1 | A compact model for transition metal dichalcogenide field effect transistors with effects of interface traps显示文摘Dear editor,Two-dimensional transition metal dichalcogenide(TMD)materials,such as molybdenum disulphide(MoS_(2)),are considered as promising channel candidates in field effect transistors(FETs)for future generations of complex systems owing to their ultrathin body and dangling-bond free surface[1]. | Yifei XU Weisheng LI Dongxuu FAN Yi SHI Hao QIU Xinran WANG | 2021 | Science China(Information Sciences)2021，64，4： | 1 |
| 2 | Interface engineering of ferroelectric-gated MoS_(2) phototransistor显示文摘Two-dimensional(2D)layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection.However,most 2D materials are very sensitive to the environment.Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials.Here,we focus on a molybdenum disulfide(MoS2)phototransistor gated by ferroelectrics,and insert a hexagonal boron nitride(h-BN)layer between MoS2 and the ferroelectric film to improve the interface.To clarify the role of h-BN in this device,two parallel devices are prepared on the same MoS_(2) flake.One device is covered with h-BN,while the other is in direct contact with the ferroelectric film.The electronic and optoelectronic properties of these two devices are then measured and compared.Experimental results reveal that,compared to device without h-BN,the MoS_(2) phototransistor with h-BN exhibits higher carrier mobility(average value:85 cm^(2)·V^(-1)·s^(-1) and highest value:185 cm^(2)·V^(-1)·s^(-1)),larger responsivity(85 A·W-1),and larger detectivity(1.76×10^(13) Jones).Thus,this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials. | Shuaiqin WU Xudong WANG Wei JIANG Luqi TU Yan CHEN Jingjing LIU Tie LIN Hong SHEN Jun GE Weida HU Xiangjian MENG Jianlu WANG Junhao CHU | 2021 | Science China(Information Sciences)2021，64，4： | 0 |
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