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1Enhanced thermoelectric performance of n-type TiCoSb halfHeusler by Ta doping and Hf alloying显示文摘The p-type TiCoSb-based half-Heuslers are widely studied due to the good electrical transport properties after hole doping,while the pristine TiCoSb is intrinsically n-type.It is thus desired to obtain a comparable n-type counterpart through optimization of electron concentration.In this work,n-type Ti_(0.9-x)HfxTa_(0.1)CoSb half-Heuslers were fabricated by arc melting,ball milling,and spark plasma sintering.An optimized carrier concentration,together with a decreased lattice thermal conductivity,was obtained by Ta doping at the Ti site,leading to a peak figure of merit(ZT)of 0.7 at 973 K in Ti_(0.9)Ta_(0.1)-CoSb.By further alloying Hf at the Ti site,the lattice thermal conductivity was significantly reduced without deteriorating the power factor.As a result,a peak ZT of 0.9 at 973 K and an average ZT of 0.54 in the temperature range of 300-973 K were achieved in Ti_(0.6)Hf_(0.3)Ti_(0.1)CoSb.This work demonstrates that n-type TiCoSb-based halfHeuslers are promising thermoelectric materials.Rui-Fang Wang Shan Li Wen-Hua Xue Chen Chen Yu-Mei Wang Xing-Jun Liu Qian Zhang 2021Rare Metals2021,40,1:3
2Structural features and thermoelectric performance of Sb- and Bi-doped Cu_(2)SnSe_(3) compounds显示文摘In this paper, a series of Sb-doped and Bi-doped Cu_(2)Sn_(1-x)M_(x)Se_(3) samples(M = Sb, Bi) are prepared by vacuum melting combined with the spark plasma sintering process. The effects of different atomic doping amounts on their properties are discussed. Structural studies indicate that all obtained samples comprise a single Cu_(2)SnSe_(3) phase. Sb and Bi atoms are experimentally demonstrated to be efficient cation dopants for increasing the transport performance. Compared with that doping on the cation site,Bi doping is much more efficient in increasing the electron concentration of the Cu_(2)SnSe_(3) system. Ultimately, a high figure of merit of 0.36 is achieved in the Cu_(2)Sn_(0.94)Sb_(0.06) Se_(3) sample at 773 K due to the enhanced power factor and lowered lattice thermal conductivity,which are 1.73 times higher than those of the pure sample.Our results provide an efficient approach to enhance thermoelectric performance via other doping atoms, which could also be applied to copper-based chalcogenide materials.Shu-Ping Deng Xian-Yan Jiang Li-Li Chen Zi-Ye Zhang Ning Qi Yi-Chu Wu Xin-Feng Tang Zhi-Quan Chen 2021Rare Metals2021,40,9:2
3Synergistically enhanced thermoelectric properties of Bi_(2)S_(3) bulk materials via Cu interstitial doping and BiCl_(3) alloying显示文摘Bi_(2)S_(3)is composed of inexpensive and environ-mental friendliness elements,which has received extensive interests and been investigated as a promising mid-tempera-ture thermoelectric material for years.Even pure Bi_(2)S_(3)pos-sesses a high Seebeck coefficient and low thermal conductivity,its low electrical conductivity leads to a lowfigure of merit(ZT)value.In this work,Bi_(2)S_(3)fabricated by solid-state melting combined with spark plasma sintering can significantly enhance the thermoelectric performance via introducing small amounts of Cu and BiCl_(3).Cu interstitial doping and Cl substitution on S site result in a large increase in electrical conductivity.Additionally,the enhanced phonon scattering is derived from the point defects caused by element doping,the grain boundaries,and the small amount of sec-ondary phase,which leads to the low thermal conductivity.Finally,a high ZT value of 0.7 is obtained at 773 K and reaches a large average ZT of 0.36 in the temperature range from room temperature(RT)to 773 K for the Cu-interstitial-doped and BiCl_(3)-alloyed(Cu_(0.01)Bi_(2)S_(3)+0.175 mol%BiCl_(3))sample.Furthermore,the mechanical properties of the Cu_(0.01)Bi_(2)S_(3)+0.175 mol%BiCl_(3)sample are lower than those of other Bi_(2)S_(3)samples,which stem from the weak chemical bonding strength.Jun Guo Zi-Yuan Wang Yu-Ke Zhu Lin Chen Jing Feng Zhen-Hua Ge 2022Rare Metals2022,41,3:1
4Enhanced thermoelectric performance in Ti(Fe, Co, Ni)Sb pseudoternary Half-Heusler alloys显示文摘TiFe0.5Ni0.5Sb-based half-Heusler compounds have the intrinsic low lattice thermal conductivity and the adjustable band structure.Inspired by the previously reports to achieve both p-and n-type components by tuning the ratio of Fe and Ni based on the same parent TiFe0.5Ni0.5Sb,we selected Co as the amphoteric dopants to prepare both n-type and p-type pseudo-ternary Ti(Fe,Co,Ni)Sb-based halfHeusler alloys.The carrier concentration,as well as the density of states effective mass was significantly increased by Co doping,contributing to the enhanced power factor of 1.80 mW m^(-1) K^(-2) for n-type TiFe0.3Co_(0.2)Ni_(0.5)Sb and 2.21 mW m^(-1) K^(-2) for p-type TiFe_(0.5)Co_(0.15)Ni_(0.35)Sb at 973 K.Combined with the further decreased lattice thermal conductivity due to the strain field and mass fluctuation scattering induced by alloying Hf on the Ti site,peak ZTs of 0.65 in n-type Ti0.8Hf_(0.2)Fe_(0.3)Co_(0.2)Ni_(0.5)Sb and 0.85 in ptype Ti0.8Hf_(0.2)Fe_(0.5)Co_(0.15)Ni_(0.35)Sb were achieved at 973 K,which is of great significance for the thermoelectric power generation applications.Qingmei Wang Xiaodong Xie Shan Li Zongwei Zhang Xiaofang Li Honghao Yao Chen Chen Feng Cao Jiehe Sui Xingjun Liu Qian Zhang 2021Journal of Materiomics2021,7,4:0
5CuPbBi_(5)S_(9) thermoelectric material with an intrinsic low thermal conductivity:Synthesis and properties显示文摘CuPbBi_(5)S_(9) compounds have been investigated as gladite for years.However,there have been no significant studies on their physical and chemical properties.This work demonstrates that upon alloying with moderate Cu,Pb,Bi,and S using an appropriate preparation method,quaternary CuPbBi_(5)S_(9) compounds can exhibit excellent figure of merit ZT within the temperature range 298-723 K.A low average velocity,low Young’s modulus and Debye temperature,and large Grüneisen parameter,determined experimentally,indicate strong lattice anharmonicity in CuPbBi_(5)S_(9) crystals.Furthermore,density functional theory calculations(local vibration of low-frequency acoustic phonons)justify the low lattice thermal conductivity of CuPbBi_(5)S_(9) compounds.Because of the low thermal conductivity(0.514 W m^(-1)K^(-1))and a relatively high power factor(293 μW m^(-1)K^(-2)),a maximum ZT of 0.42 was achieved at 723 K for CuPbBi_(5)S_(9) prepared by mechanical alloying combined with solid-state melting.Thus,CuPbBi_(5)S_(9) materials are promising candidates for use as high-performance thermoelectric materials in the intermediate-temperature range.Hao Liang Jun Guo Yun-Xuan Zhou Zi-Yuan Wang Jing Feng Zhen-Hua Ge 2022Journal of Materiomics2022,8,1:0
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