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| 1 | Latest advances in high-performance light sources and optical amplifiers on silicon显示文摘Efficient light generation and amplification has long been missing on the silicon platform due to its well-known indirect bandgap nature.Driven by the size,weight,power and cost(SWaP-C)requirements,the desire to fully realize integrated silicon electronic and photonic integrated circuits has greatly pushed the effort of realizing high performance on-chip lasers and amplifiers moving forward.Several approaches have been proposed and demonstrated to address this issue.In this paper,a brief overview of recent progress of the high-performance lasers and amplifiers on Si based on different technology is presented.Representative device demonstrations,including ultra-narrow linewidthⅢ-Ⅴ/Si lasers,fully integratedⅢ-Ⅴ/Si/Si3N4 lasers,high-channel count mode locked quantum dot(QD)lasers,and high gain QD amplifiers will be covered. | Songtao Liu Akhilesh Khope | 2021 | Journal of Semiconductors2021，42，4： | 5 |
| 2 | Investigation into the InAs/GaAs quantum dot material epitaxially grown on silicon for O band lasers显示文摘InAs/GaAs quantum dot(QD)lasers were grown on silicon substrates using a thin Ge buffer and three-step growth method in the molecular beam epitaxy(MBE)system.In addition,strained superlattices were used to prevent threading disloca-tions from propagating to the active region of the laser.The as-grown material quality was characterized by the transmission electron microscope,scanning electron microscope,X-ray diffraction,atomic force microscope,and photoluminescence spectro-scopy.The results show that a high-quality GaAs buffer with few dislocations was obtained by the growth scheme we de-veloped.A broad-area edge-emitting laser was also fabricated.The O-band laser exhibited a threshold current density of 540 A/cm^(2) at room temperature under continuous wave conditions.This work demonstrates the potential of large-scale and low-cost manufacturing of the O-band InAs/GaAs quantum dot lasers on silicon substrates. | Tianyi Tang Tian Yu Guanqing Yang Jiaqian Sun Wenkang Zhan Bo Xu Chao Zhao Zhanguo Wang | 2022 | Journal of Semiconductors2022，43，1： | 0 |
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