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| 1 | Broadband polarized photodetector based on p-BP/n-ReS2 heterojunction显示文摘Two-dimensional(2D) atomic crystals,such as graphene,black phosphorus(BP) and transition metal dichalcogenides(TMDCs) are attractive for use in optoelectronic devices,due to their unique crystal structures and optical absorption properties.In this study,we fabricated BP/ReS2 van der Waals(vdWs) heterojunction devices.The devices realized broadband photoresponse from visible to near infrared(NIR)(400–1800 nm) with stable and repeatable photoswitch characteristics,and the photoresponsivity reached 1.8 mA/W at 1550 nm.In addition,the polarization sensitive detection in the visible to NIR spectrum(532–1750 nm) was demonstrated,and the photodetector showed a highly polarization sensitive photocurrent with an anisotropy ratio as high as 6.44 at 1064 nm.Our study shows that van der Waals heterojunction is an effective way to realize the broadband polarization sensitive photodetection,which is of great significance to the realization and application of multi-functional devices based on 2D vdWs heterostructures. | Wenkai Zhu Xia Wei Faguang Yan Quanshan Lv Ce Hu Kaiyou Wang | 2019 | Journal of Semiconductors2019，40，9： | 6 |
| 2 | 激光正入射和斜入射下黑磷角分辨偏振拉曼光谱的理解显示文摘由于双折射和二向色性效应,从群论方法得到的各向同性材料声子角分辨偏振拉曼(ARPR)强度的选择定则无法应用于各向异性层状材料(ALMs).这两种效应会导致入射激光和散射信号的偏振和强度在ALMs内部依赖于传输深度,使得预测任意激光入射方向下的ARPR强度面临巨大的挑战.本文以面内各向异性的黑磷作为范例,发展了所谓的双折射-二向色性(BLD)模型,定量理解了黑磷在正入射和斜入射时的ARPR强度.特定激发光下两者采用的是同一套实拉曼张量且不需要任何拟合参数,其中双折射和二向色性效应通过复折射率加以考虑.本文还提出了实拉曼张量和复折射率可分别通过主轴的相对拉曼强度及菲涅尔公式拟合入射角依赖的反射率得到.这些结果表明,在BLD模型基础上通过考虑由双折射和二向色性效应所导致的入射激光和散射信号深度依赖的偏振和强度以及多层结构的干涉效应,可定量理解前面报道的置于多层衬底上的ALMs超薄片在激光正入射时依赖于激发光波长、ALM厚度和衬底介质层厚度的反常ARPR强度.该研究可以广泛应用到任意不透明的各向异性晶体中,为预测和操控相关声子的偏振行为提供了一种有效的方法. | 林妙玲 冷宇辰 从鑫 孟达 王佳宏 李晓莉 喻彬璐 刘雪璐 喻学峰 谭平恒 | 2020 | Science Bulletin2020，65，22： | 3 |
| 3 | Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure显示文摘Research on two-dimensional(2D) materials and related van der Waals heterostructures(vdWHs) is intense and remains one of the leading topics in condensed matter physics.Lattice vibrations or phonons of a vdWH provide rich information,such as lattice structure,phonon dispersion,electronic band structure and electron–phonon coupling.Here,we provide a mini review on the lattice vibrations in vdWHs probed by Raman spectroscopy.First,we introduced different kinds of vdWHs,including their structures,properties and potential applications.Second,we discussed interlayer and intralayer phonon in twist multilayer graphene and MoS2.The frequencies of interlayer and intralayer modes can be reproduced by linear chain model(LCM)and phonon folding induced by periodical moiré potentials,respectively.Then,we extended LCM to vdWHs formed by distinct 2D materials,such as MoS2/graphene and hBN/WS2 heterostructures.We further demonstrated how to calculate Raman intensity of interlayer modes in vdWHs by interlayer polarizability model. | Xin Cong Miaoling Lin Ping-Heng Tan | 2019 | Journal of Semiconductors2019，40，9： | 1 |
| 4 | High-performance junction field-effect transistor based on black phosphorus/β-Ga2O3 heterostructure显示文摘Black phosphorous(BP),an excellent two-dimensional(2D)monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure,has been widely applied in various devices.As the essential building blocks for modern electronic and optoelectronic devices,high quality PN junctions based on semiconductors have attracted widespread attention.Herein,we report a junction field-effect transistor(JFET)by integrating narrow-gap p-type BP and ultra-wide gap n-typeβ-Ga2O3 nanoflakes for the first time.BP andβ-Ga2O3 form a vertical van der Waals(vdW)heterostructure by mechanically exfoliated method.The BP/β-Ga2O3 vdW heterostructure exhibits remarkable PN diode rectifying characteristics with a high rectifying ratio about 107 and a low reverse current around pA.More interestingly,by using the BP as the gate andβ-Ga2O3 as the channel,the BP/β-Ga2O3 JFET devices demonstrate excellent n-channel JFET characteristics with the on/off ratio as high as 107,gate leakage current around as low as pA,maximum transconductance(gm)up to 25.3μS and saturation drain current(IDSS)of 16.5μA/μm.Moreover,it has a pinch-off voltage of–20 V and a minimum subthreshold swing of 260 mV/dec.These excellent n-channel JFET characteristics will expand the application of BP in future nanoelectronic devices. | Chang Li Cheng Chen Jie Chen Tao He Hongwei Li Zeyuan Yang Liu Xie Zhongchang Wang Kai Zhang | 2020 | Journal of Semiconductors2020，41，8： | 1 |
| 5 | 团簇NiPS_(3)光谱性质的密度泛函分析显示文摘运用密度泛函理论,在B3LYP/def2-tzvp水平下,对团簇NiPS_(3)的初始构型进行优化计算,获得9种优化构型。从红外光谱、偶极矩、拉曼光谱和极化率这4个方面对团簇NiPS_(3)的光谱学性质进行分析,结果表明:团簇NiPS_(3)的所有优化构型均为C1对称,二重平面非对称构型1^(((2)))最为稳定;二重立体戴帽三角锥构型5^(((2)))和四重立体戴帽三角锥构型3^(((4)))的红外活性和拉曼活性均相近;二重立体三角双锥构型2^(((2)))、四重立体三角双锥构型1^(((4)))的红外特征振动最高峰以及二重平面非对称构型4^(((2)))、四重立体戴帽三角锥构型3^(((4)))的拉曼特征振动最高峰均发生了红移现象;团簇NiPS_(3)的红外活性受其几何形态的影响,拉曼活性受其极化率张量大小的影响。 | 宋静丽 方志刚 毛智龙 井润田 曾鑫渔 刘立娥 | 2022 | 北京化工大学学报(自然科学版)2022，49，4： | 0 |
| 6 | First-principle study of puckered arsenene MOSFET显示文摘Two-dimensional material has been regarded as a competitive silicon-alternative with a gate length approaching sub-10 nm,due to its unique atomic thickness and outstanding electronic properties.Herein,we provide a comprehensively study on the electronic and ballistic transport properties of the puckered arsenene by the density functional theory coupled with nonequilibrium Green’s function formalism.The puckered arsenene exhibits an anisotropic characteristic,as effective mass for the electron/hole in the armchair and zigzag directions is 0.35/0.16 m0 and 1.26/0.32 m0.And it also holds a high electron mobility,as the highest value can reach 20045 cm2V–1s–1.Moreover,the puckered arsenene FETs with a 10-nm channel length possess high on/off ratio above 105 and a steep subthreshold swing below 75 mV/dec,which have the potential to design high-performance electronic devices.Interestingly,the channel length limit for arsenene FETs can reach 7-nm.Furthermore,the benchmarking of the intrinsic arsenene FETs and the 32-bit arithmetic logic unit circuits also shows that the devices possess high switching speed and low energy dissipation,which can be comparable to the CMOS technologies and other CMOS alternatives.Therefore,the puckered arsenene is an attractive channel material in next-generation electronics. | Hengze Qu Ziwei Lin Ruijuan Guo Xiyu Ming Wenhan Zhou Shiying Guo Xiufeng Song Shengli Zhang Haibo Zeng | 2020 | Journal of Semiconductors2020，41，8： | 0 |
| 7 | Two-dimensional air-stable CrSe_(2) nanosheets with thickness-tunable magnetism显示文摘Since Geim et al.firstly separated graphene from graph-ite by mechanical exfoliation method in 2004,the research of two-dimensional(2D)van der Waals(vdW)layered materials has begun[1].Compared with three-dimensional materials,2D vdW layered materials exposing the most atoms to exterior are more sensitive to external control and have the great po-tential applications in electronic,optoelectronic and electro-chemical area[2]. | Ki Kang Kim | 2021 | Journal of Semiconductors2021，42，10： | 0 |
| 8 | Polarization sensitive photodetector based on quasi-1D ZrSe_(3)显示文摘The in-plane anisotropy of transition metal trichalcogenides(MX_(3))has a significant impact on the molding of materi-als and MX_(3) is a perfect choice for polarized photodetectors.In this study,the crystal structure,optical and optoelectronic aniso-tropy of one kind of quasi-one-dimensional(1D)semiconductors,ZrSe_(3),are systematically investigated through experiments and theoretical studies.The ZrSe_(3)-based photodetector shows impressive wide spectral response from ultraviolet(UV)to near in-frared(NIR)and exhibits great optoelectrical properties with photoresponsivity of 11.9 mA·W^(-1) and detectivity of~106 at 532 nm.Moreover,the dichroic ratio of ZrSe_(3)-based polarized photodetector is around 1.1 at 808 nm.This study suggests that ZrSe_(3) has potential in optoelectronic applications and polarization detectors. | Xingang Wang Tao Xiong Kaiyao Xin Juehan Yang Yueyang Liu Zeping Zhao Jianguo Liu and Zhongming Wei | 2022 | Journal of Semiconductors2022，43，10： | 0 |
| 9 | Synthesis and electromagnetic transport of large-area 2D WTe_(2) thin film显示文摘Tungsten telluride thin films were successfully prepared on monocrystal sapphire substrates by using atomic layer de-position and chemical vapor deposition technology,and the effects of different tellurization temperatures on the properties of tungsten telluride films were investigated.The growth rate,crystal structure and composition of the film samples were character-ized and analyzed by using scanning electron microscope,Raman spectroscopy and X-ray photoelectron spectroscopy.The res-ults showed that tungsten telluride thin films with good crystal orientation in(001)were obtained at telluride temperature of 550℃.When the telluride temperature reached 570℃,the tungsten telluride began to decompose and unsaturated mag-netoresistance was found. | Yumeng Zhang Zhejia Wang Jiaheng Feng Shuaiqiang Ming Furong Qu Yang Xia Meng He Zhimin Hu Jing Wang | 2022 | Journal of Semiconductors2022，43，10： | 0 |
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