共被期刊论文引用了3次
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| 1 | 碳纳米管水平阵列的结构控制生长:进展与展望显示文摘碳纳米管水平阵列是指生长于平整基底上且与沿基底平行排列的一种碳纳米管类型。与其他类型的碳纳米管相比,水平阵列类型的碳纳米管具有很低的结构缺陷和优异的力学、电学、热学性能,在微电子、超强纤维、航空航天等尖端领域有广阔和重要的应用前景。这些应用对碳纳米管的缺陷浓度、手性分布、半导体型纯度及阵列密度等指标的要求十分严苛,因而碳纳米管水平阵列的结构控制与批量制备是其实现性能应用的关键。在过去的近三十年中,研究者们已在碳纳米管水平阵列的结构控制生长上取得了大量进展,但同时也面临不少挑战。本文对碳纳米管水平阵列的结构控制、批量制备及前沿应用的研究进展进行了回顾,并对其面临的挑战和未来发展方向进行了讨论。 | 石晓飞 姜沁源 李润 崔一鸣 刘青雄 魏飞 张如范 | 2021 | 化工学报2021，72，1： | 6 |
| 2 | Quality metrology of carbon nanotube thin films and its application for carbon nanotube-based electronics显示文摘Large area,highly uniform,and density controllable carbon nanotube(CNT)films,either well-aligned or random network,are required for practical application of CNT-based electronics.Mass production methods for such CNT films and corresponding quality metrology,which are critical for pushing the CNT-based transistor technology to manufacturing,should be developed in advance.Much progress has been made on fabrication of CNT films;however,there still lacks a metrology for thoroughly quantifying their quality until now.In this paper,through comparing study of CNT films fabricated by dip-coating(DC)and direct deposition(DD)methods,local anisotropy in the film is revealed to impact the performance uniformity of devices so fabricated in a spatial scale dependent manner.The anisotropy effect should be taken into account for the quality characterization of CNT films,which was not noticed in previous studies.Based on these findings,we propose a four-parameter metrology to quantify the overall quality of the CNT films,which includes the local tube density(DL),global density uniformity(Cv),local degree of order(OL),and the relative tube proportion in a certain orientation(Pθ)at a location.The four-parameter characterization and corresponding device performance confirm DC films are superior to DD films for practical application.The four-parameter metrology is not only powerful for overall quality evaluation of CNT films,but also able to predict the fluctuation of devices’performance.Therefore,this material metrology is important for devices and circuits design and valuable for pushing the CNT-based transistor technology forward. | Jie Zhao Lijun Shen Fang Liu Pan Zhao Qi Huang Hua Han Lianmao Peng Xuelei Liang | 2020 | Nano Research2020，13，6： | 4 |
| 3 | 碳纳米管薄膜制备及其光电探测应用进展显示文摘光电探测器在遥感、夜视、侦察、医学成像、环境保护和化学检测等方面的应用十分广泛,而光电探测材料的结构与性能直接影响着光电探测器的性能。近年来碳纳米管由其所具有的独特光学和电学性能迅速成长为光电探测中不可或缺的材料。虽然前期研究主要集中在基于单根碳纳米管的光电响应机理研究,但由于未来应用场景中必然是以碳纳米管薄膜为基础的,因而围绕制备大面积、高密度、高取向、高均匀度碳纳米管薄膜,并以此为基础制备光电探测器件成为了近期碳纳米管光电应用领域的研究热点。本文围绕近年来碳纳米管薄膜制备及其在光电探测器件应用这两个方面的进展,分别进行了详尽的介绍和讨论,并展望了碳纳米管薄膜光电探测器的发展趋势。 | 杨露寒 张家振 徐煌 周洁 邱汉迅 陈刚 | 2021 | 红外与毫米波学报2021，40，4： | 3 |
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