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| 1 | Mid-wavelength InAs/GaSb type-Ⅱ superlattice barrier detector with nBn design and M barrier显示文摘This study reports the performance of an InAs/GaSb type-Ⅱ superlattices(T2SLs) detector with nBn structure for mid-wavelength infrared(MWIR) detection. An electronic band structure of M barrier is calculated using 8-band k·p method, and the nBn structure is designed with the M barrier. The detector is prepared by wet etching, which is simple in manufacturing process. X-ray diffraction(XRD) and atomic force microscope(AFM) characteristics indicate that the detector material has good crystal quality and surface morphology. The saturation bias of the spectral response measurements at 77 K is 300 m V, and the device is promising to work at a temperature of 140 K. Energy gap of T2SLs versus temperature is fitted by the Varshni curve, and zero temperature bandgap Eg(0), empirical coefficients α and β are extracted. A dark current density of 3.2×10-5A/cm2and differential resistance area(RA) product of 1.0×104Ω·cm2are measured at 77 K. The dominant mechanism of dark current at different temperature ranges is analyzed. The device with a 50% cutoff wavelength of 4.68 μm exhibits a responsivity of 0.6 A/W, a topside illuminated quantum efficiency of 20% without antireflection coating(ARC), and a detectivity of 9.17×1011cm·Hz1/2/W at 77 K and 0.3 V. | LIU Zhaojun ZHU Lianqing LU Lidan DONG Mingli ZHANG Dongliang ZHENG Xiantong | 2023 | Optoelectronics Letters2023，19，10： | 0 |
| 2 | 基于k·p方法的二类超晶格红外探测器仿真进展显示文摘二类超晶格(T2SL)相对于其它制冷型红外探测器材料体系,具有成本低、均匀性高、工艺兼容性好等特点,且波长灵活可调、俄歇复合速率低。k·p方法作为一种常用且相对成熟的能带结构仿真技术,具有计算精度高、节省计算资源等特点,在T2SL的仿真中受到了广泛的关注。梳理了中波、长波、甚长波T2SL红外探测器的仿真进展,归纳了k·p方法的发展过程,以及该方法在T2SL红外探测器仿真中的进展和作用,直观展示k·p方法在超晶格仿真工作中的准确性与便利性;重点讨论了T2SL探测器的暗电流机制、量子效率和吸收光谱等性质,对T2SL红外探测器的研究和应用前景进行展望。采用包络函数近似下的k·p方法可以对超晶格材料的能带结构和电子性质进行较为准确的理论分析和仿真计算。 | 孙童 关晓宁 张凡 宋海智 芦鹏飞 | 2023 | 激光技术2023，47，4： | 0 |
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