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| 1 | 流态化气相沉积过程中稀释气体流量对颗粒表面SiO_(2)沉积的影响显示文摘利用Fe(Si)合金球形粉末为沉积基底,正硅酸乙酯为SiO_(2)气相介质前驱体,采用引入流化环节的化学气相沉积工艺合成了Fe(Si)/SiO_(2)复合粉末。考察了沉积过程中Ar稀释气体流量对Fe(Si)基底粉末表面SiO_(2)绝缘介质沉积过程的影响规律及形成完整核壳异质结构的稀释气体流量范围。实验结果表明,随着流态化气相沉积过程中Ar稀释气体流量的逐渐增大,SiO_(2)绝缘介质在Fe(Si)粉末基底表面的微观形貌从亚微米级团簇转变为完整薄膜再向多孔薄膜转变,沉积速率先减小后增大再降低,在250 sccm时SiO_(2)绝缘介质均匀性最好,沉积速率为0.069 nm/s。此外,形成完整Fe(Si)/SiO_(2)核壳异质结构的Ar稀释气体流量范围为200~300 sccm。 | 吴朝阳 高子涵 孔辉 先琛 贾吉祥 廖相巍 | 2021 | 过程工程学报2021，21，8： | 3 |
| 2 | Superior Pseudocapacitive Storage of a Novel Ni3Si2/ NiOOH/Graphene Nanostructure for an All‑Solid‑State Supercapacitor显示文摘Recent developments in the synthesis of graphene-based structures focus on continuous improvement of porous nanostructures,doping of thin films,and mechanisms for the construction of threedimensional architectures.Herein,we synthesize creeper-like Ni3Si2/NiOOH/graphene nanostructures via low-pressure all-solid meltingreconstruction chemical vapor deposition.In a carbon-rich atmosphere,high-energy atoms bombard the Ni and Si surface,and reduce the free energy in the thermodynamic equilibrium of solid Ni–Si particles,considerably catalyzing the growth of Ni–Si nanocrystals.By controlling the carbon source content,a Ni3Si2 single crystal with high crystallinity and good homogeneity is stably synthesized.Electrochemical measurements indicate that the nanostructures exhibit an ultrahigh specific capacity of 835.3 C g^−1(1193.28 F g^−1)at 1 A g^−1;when integrated as an all-solidstate supercapacitor,it provides a remarkable energy density as high as 25.9 Wh kg^−1 at 750 W kg^−1,which can be attributed to the freestanding Ni3Si2/graphene skeleton providing a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution,thereby accelerating the electron exchange rate.The growth of the high-performance composite nanostructure is simple and controllable,enabling the large-scale production and application of microenergy storage devices. | Jing Ning Maoyang Xia Dong Wang Xin Feng Hong Zhou Jincheng Zhang Yue Hao | 2021 | Nano-Micro Letters2021，13，1： | 0 |
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