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| 1 | Two-Dimensional Pnictogen for Field-Effect Transistors显示文摘Two-dimensional(2D)layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford.2D pnictogen,group-VA atomic sheet(including phosphorene,arsenene,antimonene,and bismuthene)is believed to be a competitive candidate for next-generation logic devices.This is due to their intriguing physical and chemical properties,such as tunable midrange bandgap and controllable stability.Since the first black phosphorus fieldeffect transistor(FET)demo in 2014,there has been abundant exciting research advancement on the fundamental properties,preparation methods,and related electronic applications of 2D pnictogen.Herein,we review the recent progress in both material and device aspects of 2D pnictogen FETs.This includes a brief survey on the crystal structure,electronic properties and synthesis,or growth experiments.With more device orientation,this review emphasizes experimental fabrication,performance enhancing approaches,and configuration engineering of 2D pnictogen FETs.At the end,this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics. | Wenhan Zhou Jiayi Chen Pengxiang Bai Shiying Guo Shengli Zhang Xiufeng Song Li Tao Haibo Zeng | 2019 | Research2019，，1： | 1 |
| 2 | Bilayer tellurene-metal interfaces显示文摘Tellurene, an emerging two-dimensional chain-like semiconductor, stands out for its high switch ratio, carrier mobility and excellent stability in air. Directly contacting the 2D semiconductor materials with metal electrodes is a feasible doping means to inject carriers. However, Schottky barrier often arises at the metal–semiconductors interface, impeding the transport of carriers. Herein, we investigate the interfacial properties of BL tellurene by contacting with various metals including graphene by using ab initio calculations and quantum transport simulations. Vertical Schottky barriers take place in Ag, Al, Au and Cu electrodes according to the maintenance of the noncontact tellurene layer band structure. Besides, a p-type vertical Schottky contact is formed due to the van der Waals interaction for graphene electrode. As for the lateral direction, p-type Schottky contacts take shape for bulk metal electrodes(hole Schottky barrier heights(SBHs) ranging from 0.19 to 0.35 eV). Strong Fermi level pinning takes place with a pinning factor of 0.02. Notably, a desirable p-type quasi-Ohmic contact is developed for graphene electrode with a hole SBH of 0.08 eV. Our work sheds light on the interfacial properties of BL tellurene based transistors and could guide the experimental selections on electrodes. | Hua Pang Jiahuan Yan Jie Yang Shiqi Liu Yuanyuan Pan Xiuying Zhang Bowen Shi Hao Tang Jinbo Yang Qihang Liu Lianqiang Xu Yangyang Wang Jing Lv | 2019 | Journal of Semiconductors2019，40，6： | 0 |
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