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| 1 | 化学气相渗透法制备碳化硅界面涂层的沉积动力学研究显示文摘目的研究沉积温度对SiC界面涂层微观形貌、结构和成分的影响,探讨SiC界面涂层的沉积动力学和沉积机理。方法采用Factsage软件计算MTS-H2反应物体系热力学平衡后产物组成,采用化学气相渗透法(CVI)在碳化硅纤维上制备SiC界面涂层,采用SEM、TEM、XRD等分析测试技术对SiC涂层形貌、结构和成分进行分析。结果在860~1060℃温度范围内,MTS-H2体系平衡后的主要产物有SiC、C等,并在该温度范围采用CVI工艺制备出了SiC界面涂层。结论在860~1060℃温度范围内,提高沉积温度有利于增加SiC的产率。温度低于960℃时,制备的SiC界面涂层表面光滑;高于1060℃时,得到了表面具有团簇结构的涂层,并且随着沉积温度的升高,涂层的结晶度提高。沉积动力学计算结果表明,温度低于1060℃时,SiC的沉积过程受表面反应控制;温度高于1060℃时,沉积过程受扩散控制。采用CVI工艺制备出了单一立方相的SiC界面涂层,并且(111)晶面为SiC颗粒的优先生长晶面。 | 戴建伟 何利民 申造宇 刘冠熙 甄真 许振华 牟仁德 | 2021 | 装备环境工程2021，18，6： | 1 |
| 2 | Abnormal anti-oxidation behavior of hexagonal boron nitride grown on copper显示文摘Atomic-layered hexagonal boron nitride(hBN)is expected to be the best two-dimensional(2D)anti-oxidation layer on metals for its incomparable impermeability,insulativity,and stability,as well as the progressive bottom-up growth techniques to ensure fast coating on metal surface in large area.However,its real anti-oxidation ability in practice is found to be unsatisfactory and nonuniform,and the main obstacle to achieving ideal anti-oxidation performance lies in unclear anti-oxidation behavior at special interface between 2D hBN and three-dimensional(3D)metals.Herein,system of monolayer hBN grown on copper(Cu)foils with various lattice orientations was grown to investigate the anti-oxidation behavior of different interlayer configurations.By using structural characterizations together with analysis of topography,we surprisingly found that stronger interlayer coupling led to worse anti-oxidation performance owing to fast diffusion of O2 through higher hBN corrugations generated at the commensurate hBN/Cu(111)configuration.In view of this,we developed the approach of cyclic reannealing that can effectively flatten corrugations and steps,and therefore improve the anti-oxidation performance to a great extent.This work provides a more indepth understanding of anti-oxidation behavior of 2D materials grown on 3D metals,and a practical method to pave the way for its large-scale applications in future. | Li Wang Jiajie Qi Shuai Zhang Mingchao Ding Wei Wei Jinhuan Wang Zhihong Zhang Ruixi Qiao Zhibin Zhang Zehui Li Kehai Liu Ying Fu Hao Hong Can Liu Muhong Wu Wenlong Wang Jun He Yi Cui Qunyang Li Xuedong Bai Kaihui Liu | 2022 | Nano Research2022，15，8： | 0 |
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