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| 1 | Emerging in-plane anisotropic two-dimensional materials显示文摘Black phosphorus(BP)is a rapidly up and coming star in two-dimensional(2D)materials.The unique characteristic of BP is its in-plane anisotropy.This characteristic of BP ignites a new type of 2D materials that have low-symmetry structures and in-plane anisotropic properties.On this basis,they offer richer and more unique low-dimensional physics compared to isotropic 2D materials,thus providing a fertile ground for novel applications including electronics,optoelectronics,molecular detection,thermoelectric,piezoelectric,and ferroelectric with respect to in-plane anisotropy.This article reviews the recent advance in characterization and applications of in-plane anisotropic 2D materials. | Liang Li Wei Han Lejing Pi Ping Niu Junbo Han Chengliang Wang Bin Su Huiqiao Li Jie Xiong Yoshio Bando Tianyou Zhai | 2019 | InfoMat2019，1，1： | 16 |
| 2 | 各向异性硫化锗薄片从饱和吸收到反饱和吸收的偏振可调非线性吸收模式及其在全光开关中的应用显示文摘近年来,一些二维层状材料,尤其是具有褶皱蜂窝结构的IV-VI族单硫化物,由于其特殊的各向异性化学和物理性质,而备受关注.在IV-VI族层状化合物MX(M=Ge,Sn;X=Se,S)中,硫化锗(GeS)以其最强的各向异性热导率和热电品质因子而引人注目.此外,GeS薄片与层数无关的直接能带(Eg^1.6 eV,E1~2.1 eV)为可见光光探测器的应用提供了良好的应用前景.本文研究了GeS薄片的偏振可调非线性吸收模式,利用偏振相关拉曼光谱和线性吸收光谱表征了厚度为251 nm GeS的晶格取向和吸收能带.考虑到GeS薄片的较低的热损伤阈值,在不改变GeS非线性特性的前提下,制备了硫化锗/石墨烯异质结.非线性吸收结果表明,在硫化锗/石墨烯异质结中,利用偏振可调的600 nm线偏振飞秒激光沿扶手椅方向激发产生饱和吸收(SA)效应,沿锯齿方向激发反饱和吸收(RSA)效应.实验验证了基于偏振的硫化锗/石墨烯异质结全光开关的功能.值得注意的是,正因为GeS的偏振相关非线性吸收模式(SA/RSA),全光开关的'开'、'关'状态可通过控制飞秒开关激光(600 nm,35 fs500 Hz,12 GW cm-2)的偏振,进而改变连续光(CW)激光(532 nm,80 nW)透射率的方式来实现.通过改变开关光的偏振,开关比可以达到17%,与之相比,通过提高开关光入射功率获得的开关比仅为3.0%.本文介绍的偏振可调吸收模式,为基于硫化锗/石墨烯异质结的下一代光电子器件开辟了新的前景. | 欧阳昊 张晨希 刘祺瑞 胡思扬 张峻 郝昊 尤洁 程湘爱 江天 | 2020 | Science China Materials2020，63，8： | 4 |
| 3 | Recent advances in anisotropic two-dimensional materials and device applications显示文摘Two-dimensional(2D)materials,such as transition metal dichalcogenides(TMDs),black phosphorus(BP),MXene and borophene,have aroused extensive attention since the discovery of graphene in 2004.They have wide range of applications in many research fields,such as optoelectronic devices,energy storage,catalysis,owing to their striking physical and chemical properties.Among them,anisotropic 2D material is one kind of 2D materials that possess different properties along different directions caused by the intrinsic anisotropic atoms5 arrangement of the 2D materials,mainly including BP,borophene,low-symmetry TMDs(ReSe2 and ReSa)and group IV monochalcogenides(SnS,SnSe,GeS,and GeSe).Recently,a series of new devices has been fabricated based on these anisotropic 2D materials.In this review,we start from a brief introduction of the classifications,crystal structures,preparation techniques,stability,as well as the strategy to discriminate the anisotropic characteristics of 2D materials.Then,the recent advanced applications including electronic devices,optoelectronic devices,thermoelectric devices and nanomechanical devices based on the anisotropic 2D materials both in experiment and theory have been summarized.Finally,the current challenges and prospects in device designs,integration,mechanical analysis,and micro-/nano-fabrication techniques related to anisotropic 2D materials have been discussed.This review is aimed to give a generalized knowledge of anisotropic 2D materials and their current devices applications,and thus inspiring the exploration and development of other kinds of new anisotropic 2D materials and various novel device applications. | Jinlai Zhao Dingtao Ma Cong Wang Zhinan Guo Bin Zhang Jianqing Li Guohui Nie Ni Xie Han Zhang | 2021 | Nano Research2021，14，4： | 4 |
| 4 | 第四主族金属硫族化合物二维材料研究进展显示文摘第四主族金属硫族化合物具有丰富的晶体结构与组成.理论计算预测这类材料的二维晶体具有优异的热电、铁电、压电等性能.但是,目前这类材料的二维结构与性质研究的实验工作尚未系统展开.本文以这类材料二维结构与性质的关联性为切入点,系统展示了这类材料二维结构的合成进展,总结了其二维尺度上的独特性质,并对这类材料的发展前景及挑战进行了展望. | 王靖慧 焦丽颖 | 2017 | 科学通报2017，62，20： | 2 |
| 5 | 二维GeSe光电性质的第一性原理计算显示文摘GeSe作为二维材料的新成员,近年来引起了人们的广泛关注。文章采用第一性原理方法,选取PBE泛函和HSE06杂化泛函,研究了二维GeSe材料的电子结构和光学性质。结果表明:二维GeSe是带隙为1.56 eV的间接带隙半导体,价带顶和导带底分别位于Γ-Y方向和Γ-X方向,价带主要由Ge-4p和Se-4p杂化而成,且价带顶边缘附近出现Ge-4s态,这对二维GeSe的电子结构有重要影响;从能带结构和态密度出发,系统研究了二维GeSe的折射、消光和吸收等光学性质;介电函数虚部的第一个峰值出现在2.15 eV,对应电子从第一个价带到第一个导带的跃迁,主要是电子从Ge-s、Se-pz态到Ge-px、py、pz态的跃迁。沿zigzag方向和armchair方向的静态介电常数分别为7.56和7.00。二维GeSe的吸收边缘在1200 nm左右,对可见光波有很强的吸收且具有较强的光偏振敏感性。研究结果表明GeSe在光学和光电子等领域极具应用潜力。 | 范强 青海银 曹进 杨建会 | 2021 | 乐山师范学院学报2021，36，8： | 1 |
| 6 | GeSe2中强各向异性偏振相关的非线性光学响应显示文摘二硒化锗(GeSe2)作为一种层状Ⅳ-Ⅵ族半导体,具有面内各向异性结构及宽能带间隙,表现出了独特的光、电及热学性能.本文利用偏振拉曼光谱和线性吸收谱分别对GeSe2纳米片的晶轴取向和能带特性进行表征,并以此为依据采用微区I扫描系统研究了GeSe2在共振能带附近的光学非线性吸收机制.结果表明,GeSe2中非线性吸收机制为饱和吸收与激发态吸收的叠加,且对入射光偏振与波长均有强烈的依赖.近共振激发(450 nm)条件下,激发态吸收对偏振的依赖程度比较大,随着入射光偏振的不同,非线性调制深度可由4.6%变化至9.9%;而非共振激发(400 nm)时,该调制深度仅由7.0%变化至9.7%.同时,相比于饱和吸收,激发态吸收的偏振依赖程度受远离共振激发波长的影响而变化更大. | 欧阳昊 胡思扬 申曼玲 张晨希 程湘爱 江天 | 2020 | 物理学报2020，69，18： | 0 |
| 7 | Polarization-Dependent Optical Properties and Optoelectronic Devices of 2D Materials显示文摘The development of optoelectronic devices requires breakthroughs in new material systems and novel device mechanisms,and the demand recently changes from the detection of signal intensity and responsivity to the exploration of sensitivity of polarized state information.Two-dimensional(2D)materials are a rich family exhibiting diverse physical and electronic properties for polarization device applications,including anisotropic materials,valleytronic materials,and other hybrid heterostructures.In this review,we first review the polarized-light-dependent physical mechanism in 2D materials,then present detailed descriptions in optical and optoelectronic properties,involving Raman shift,optical absorption,and light emission and functional optoelectronic devices.Finally,a comment is made on future developments and challenges.The plethora of 2D materials and their heterostructures offers the promise of polarization-dependent scientific discovery and optoelectronic device application. | Ziwei Li Boyi Xu Delang Liang Anlian Pan | 2020 | Research2020，，1： | 0 |
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