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| 1 | Enhanced thermoelectric properties of SnSe thin films grown by pulsed laser glancing-angle deposition显示文摘SnSe single crystals have been demonstrated to possess excellent thermoelectric properties.In this work,we demonstrate a grain size control method in growing nanocrystalline SnSe thin films through a glancing angle pulsed-laser deposition approach.Structural characterization reveals that the SnSe film deposited at a normal angle has a preferred orientation along a axis,while by contrast,the SnSe film deposited at an 80glancing angle develops a nanopillar structure with the growth direction towards the incident atomic flux.The glancing angle deposition greatly reduces the grain size of the thin film due to a shadowing effect to the adatoms,resulting in significantly increased power factor for more than 100%.The maximum Seebeck coefficient and power factor are 498.5 mV=K and 18.5 mWcm^(-1)K^(-2),respectively.The enhancement of thermoelectric property can be attributed to the potential barrier scattering at grain boundaries owing to the reduced grain size and increased grain boundaries in the film.Given this enhanced power factor,and considering the fact that the nanopillar structure should have much lower thermal conductivity than a plain film,the zT value of such made SnSe film could be significantly larger than the corresponding single crystal film,making it a good candidate for thin film-based thermoelectric device. | Chun Hung Suen Dongliang Shi Y.Su Zhi Zhang Cheuk Ho Chan Xiaodan Tang Y.Li Kwok Ho Lam Xinxin Chen B.L.Huang X.Y.Zhou Ji-Yan Dai | 2017 | Journal of Materiomics2017，3，4： | 1 |
| 2 | 溅射沉积掺Ag的SnSe薄膜的微结构和热电性能显示文摘使用粉末烧结SnSe合金靶高真空磁控溅射制备掺杂Ag的SnSe热电薄膜,利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)和能谱仪(EDS)等手段分析薄膜的相组成、表面形貌、截面形貌、微区元素含量和元素分布,利用塞贝克系数/电阻分析系统LSR-3测量沉积薄膜的电阻率和Seebeck系数,研究了不同Ag含量SnSe薄膜的热电性能。结果表明,采用溅射技术可制备出正交晶系Pnma结构的SnSe相薄膜,掺杂的Ag在薄膜中生成了纳米Ag3Sn。与未掺杂Ag相比,掺杂Ag的SnSe薄膜其电阻率和Seebeck系数(绝对值,下同)明显减小。并且在一定掺杂范围内,掺杂Ag越多的薄膜电阻率和Seebeck系数越小。未掺杂Ag的SnSe薄膜样品,其Seebeck系数较大但是电阻率也大,因此功率因子较小。Ag掺杂量(原子分数)为7.97%的样品,因其Seebeck系数绝对值较大而电阻率适当,280℃时的功率因子最大(约为0.93 mW·m^-1·K^-2),比未掺杂Ag的样品(PF=0.61 mW·m^-1·K^-2)高52%。掺杂适量的Ag能提高溅射沉积的SnSe薄膜的热电性能(功率因子)。 | 李贵鹏 宋贵宏 胡方 杜昊 尹荔松 | 2020 | 材料研究学报2020，34，8： | 1 |
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