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| 1 | Different structural origins for different sized surface pits observed on a-plane GaN film显示文摘A correlation study between the observed surface morphology using high-resolution scanning electron microscopy(HRSEM) and the observed structural imperfections using transmission electron microscopy(TEM) has been conducted for a-plane Ga N. There are three different sized asymmetric surface pits: large pit of 500 nm–2 ?m in side length, medium pit of 50 nm in side length, and small pit with side lengths of less than 5 nm, which originate from incomplete island coalescence, screw dislocation, and partial dislocation(PD), respectively. Both screw dislocation and PD can produce pits on the free surface because they have a perpendicular line tension to the surface, which must remain in balance with the surface tension. The two types of dislocation lead to distinctive pit sizes because the PD has a smaller Burgers vector component along the dislocation line than the pure screw dislocation. A pit that is produced in the island-coalescing process is much larger than those caused by dislocations because island coalescence is a kinetic process that involves large-scale mass transportation, whereas the dislocation mediates the surface in the local area. These three types of surface pits sometimes interact with one another in space. The coalescence of the island determines the surface morphology at large scales, whereas the defects affect the details. | GAO ZhiYuan LI JiangJiang XUE XiaoWei CUI BiFeng XING YanHui ZOU DeShu | 2016 | Science China(Technological Sciences)2016，59，1： | 1 |
| 2 | 玻璃衬底上制备GaN薄膜的研究进展显示文摘近年来,Ga N基发光二极管(LED)的发展异常迅速,以玻璃为衬底的LED具有成本低、可大面积化生产等优点而引起了国内外许多科研机构的广泛研究兴趣。但由于普通玻璃较低的软化温度(500~600℃)以及与Ga N之间存在较大的晶格失配问题,一直阻碍其发展。重点综述了玻璃衬底上生长Ga N薄膜的方法以及改善外延层晶体质量的技术。分别介绍了两种在普通玻璃上生长Ga N的方法,即低温生长和局部加热生长,同时详述了采用缓冲层和横向外延过生长(ELO)技术对外延Ga N晶体质量的影响。对局部加热、ELO等技术在玻璃衬底LED方面的应用进行了分析和预测,认为以玻璃为衬底的LED终会取得快速地发展。 | 汪金 张卿 杨国锋 高淑梅 李果华 | 2015 | 半导体技术2015，40，11： | 1 |
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