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| 1 | Co/Pt multilayer-based pseudo spin valves with perpendicular magnetic anisotropy显示文摘Pseudo spin valves(SVs) exhibiting perpendicular magnetic anisotropy were prepared by magnetron sputtering. Magnetization measurements of the Co/Pt multilayers were performed to select the reference and free layers. The selection criteria are square magnetic hysteresis loops, weaker current shunting effect, and proper coercivity. The optimal reference layer and free layer are Pt(5.0 nm)/[Co(0.4 nm)/Pt(0.6 nm)]3/Co(0.4 nm)/Cu(3.0 nm)and Cu(3.0 nm)/[Co(0.4 nm)/Pt(1.5 nm)]4, respectively.The resulting pseudo SV exhibits two well-separated hysteresis loops when the field is applied perpendicular to the film plane. The minor hysteresis loop corresponding to the free layer shifts toward negative direction of the magnetic field axis, indicating ferromagnetic interlayer exchange coupling between the two magnetic layers. The coupling also enhances the coercivity(HC) of both layers. The perpendicular giant magnetoresistance(GMR) of 2.7 % is achieved with current in plane measurement. The GMR first increases when Pt seed layer is thickened, reaches a maximum of 3.0 % at 4 nm and then decreases with the further increase of thickness. But thicker Cu spacer layer always lowers the GMR of the SV. | Shuai Liu Guang-Hua Yu Mei-Yin Yang Hai-Lang Ju Bao-He Li Xiao-Bai Chen | 2014 | Rare Metals2014，33，6： | 7 |
| 2 | Construction of high-performance magnetic sensor based on anisotropic magnetoresistance Ta/MgO/NiFe/MgO/Ta film显示文摘The anisotropic magnetoresistance film is an important core material for developing the magnetic sensors.Here,Ta(5)/Mg O(3)/Ni Fe(10)/Mg O(3)/Ta(3)multilayers(in nanometer)were prepared by magnetron sputtering and further applied to construct a sensor element by combining with the Wheatstone bridge.The 1/f noise of the sensor element was greatly reduced by three orders of magnitude after annealing at 400℃for 7200 s,which was mainly due to the significant microstructural changes during the annealing.However,when the sensor element was applied to detect the magnetic signal of a magnetic code disk with 512 N-S magnetic poles,the output voltage signal of the sensor displayed a large fluctuation of±0.05 V.In order to reduce the voltage fluctuation,a magnetic sensor chip by using a parallelly arranged multipath Wheatstone bridges and auto-gain compensation structure was designed,and magnetic sensor elements and the high-performance computing drive module were prepared.The output voltage fluctuation of the magnetic sensor was reduced by about 90%and approached to±0.005 V.These findings provide an important basis for the practical application of Ni Fe-based magnetic sensing film materials. | Yue-Dou Pan Ling-Ran Yu Lei Wang Tao Chen Xin-Ya Wei Rong-Gui Zhu Jian-Wei Li Chun Feng Guang-Hua Yu | 2021 | Rare Metals2021，40，8： | 0 |
| 3 | 退火对MgO/NiFe/MgO多层膜平面霍尔效应的影响显示文摘采用磁控溅射的方法制备了结构为Ta(5 nm)/Mg O(6 nm)/Ni Fe(t_(NiFe))/Mg O(4 nm)/Ta(3 nm)的磁性多层膜,Ni Fe的厚度t_(NiFe)从5 nm增加到100 nm,之后在真空退火炉中经过400℃,1 h的退火处理并且进行随炉冷却,整个过程中沿着薄膜易轴方向施加大约4378 A·m-1的磁场。采用四探针的方法来测量平面霍尔电压(PHE)和相对电阻变化率,通过X射线衍射(XRD)和高分辨透射电子显微镜(HRTEM)来分析多层膜退火前后的微结构变化。研究结果表明:对于制备态和退火态的Ta/Mg O/Ni Fe/Mg O/Ta纳米磁性多层膜结构,当t_(NiFe)<40 nm时,霍尔输出电压骤减,随着t_(NiFe)的继续增加,霍尔电压基本保持不变。然而,所有的制备态同一厚度的样品经过退火处理之后,霍尔电压都有一定程度的提高,当t_(NiFe)=5 nm时,平面霍尔输出电压增加最大。随着Ni Fe厚度的继续增加,退火处理所导致的输出电压的提高幅度逐渐减小,当t_(NiFe)=100 nm时,霍尔电压退火之后几乎保持不变。不同Ni Fe厚度的样品,霍尔电压经退火处理后之所以提高幅度不同,主要与两个因素有关,一是Mg O/Ni Fe异质界面会增强电子自旋相关散射提高PHE输出电压,二是Ni Fe层因分流也会导致PHE输出电压下降。 | 韩灵生 赵之铎 周丽娟 赵崇军 李明华 于广华 | 2016 | 稀有金属2016，40，6： | 0 |
| 4 | 基于LabVIEW的磁阻自动优化测量系统显示文摘以功率电源、电磁铁、高分辨率特斯拉计、步进电机转动器、精密电流源与精准电压表为基础器件,基于LabVIEW,编写虚拟仪器程序,实时呈现曲线与数据,并与用户交互来控制实际仪器。实现了施加特定磁场、转动角度、控制精确电流、读取次微伏级电压等基础功能,并通过编程实现自动优化测试与数据处理。系统以自动优化分辨率为创新点,并且在编写程序时以模块化为导向,使得模块之间更容易实现增改与迁移。 | 吴东阳 姚志宏 | 2023 | 传感器与微系统2023，42，1： | 0 |
| 5 | Enhanced spin diffusion length by suppressing spin-flip scattering in lateral spin valves显示文摘The spin transport was investigated in permally(Py)/Mg O/Ag junction with lateral spin valve structure.Non-local lateral spin valves measurement was carried out to determine the spin accumulation signal in Ag strip, and the spin diffusion length in Ag of the lateral spin valves was extracted from devices with the different distances between injector and detector. The experimental results are found that spin accumulation and spin diffusion length(λs) could be significantly enhanced in Ag strip with Mg O capping layer, and those effects may be attributed to the low-surface spin scattering rate in Ag with an Mg O capping layer. | Lin-Jing Pan Le Wang Li-Yuan Zhang | 2015 | Rare Metals2015，34，3： | 0 |
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