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| 1 | Correlation between electrical conductivity–optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin films显示文摘ZnO thin films were deposited using the simple,flexible and cost-effective spray ultrasonic technique at different precursor molarities values.The films were deposited on a glass substrate at 350 C.This paper is to presentanewapproachtothedescriptionofcorrelationbetweenelectricalconductivityandopticalgapenergywith precursor molarity of ZnO thin films.The ZnO films exhibit higher electrical n-type semiconductors,whose band gap energy increased from 3.08 to 3.37 eV with an increasing of precursor molarity of 0.05 to 0.1 M.The maximum value of electrical conductivity of the films is 7.96(cm)1obtained in the ZnO thin film for precursor molarity0.125 M.The correlation between the electrical and the optical properties with the precursor molarity suggests that the electrical conductivity of the films is predominantly influenced by the band gap energy and the precursor molarity.The measurement of the electrical conductivity of the films with correlation is equal to the experimental with the error is about 1%in the higher conductivity. | Said Benramache Okba Belahssen Abderrazak Guettaf Ali Arif | 2013 | Journal of Semiconductors2013，34，11： | 5 |
| 2 | Correlation between crystallite size–optical gap energy and precursor molarities of ZnO thin films显示文摘We investigated the structural and optical properties of ZnO thin films as an n-type semiconductor. The films were deposited at different precursor molarities using an ultrasonic spray method. In this paper we focused our attention on a new approach describing a correlation between the crystallite size and optical gap energy with the precursor molarity of ZnO thin films. The results show that the X-ray diffraction (XRD) spectra revealed a preferred orientation of the crystallites along the c-axis. The maximum value of the crystallite size of the films is 63.99 nm obtained at 0.1 M. The films deposited with 0.1 M show lower absorption within the visible wavelength region. The optical gap energy increased from 3.08 to 3.37 eV with increasing precursor molarity of 0.05 to 0.1 M. The correlation between the structural and optical properties with the precursor molarity suggests that the crystallite size of the films is predominantly influenced by the band gap energy and the precursor molarity. The measurement of the crystallite size by the model proposed is equal to the experimental data. The minimum error value was estimated by Eq. (4) in the higher crystallinity. | S.Benramache O.Belahssen A.Guettaf A.Arif | 2014 | Journal of Semiconductors2014，35，4： | 2 |
| 3 | Structural, optical and electrical properties of zinc oxide thin films deposited by a spray pyrolysis technique显示文摘Zinc oxide(ZnO) thin films were deposited on glass substrates by spray pyrolysis technique decomposition of zinc acetate dihydrate in an ethanol solution with 30 m L of deposition rate, the ZnO thin films were deposited at two different temperatures: 300 and 350°C. The substrates were heated using the solar cells method.The substrate was R217102 glass, whose size was 30 17.5 1 mm3. The films exhibit a hexagonal wurtzite structure with a strong(002) preferred orientation. The higher value of crystallite size is attained for sprayed films at 350°C, which is probably due to an improvement of the crystallinity of the films at this point. The average transmittance of obtain films is about 90%–95%, as measured by a UV–vis analyzer. The band gap energy varies from 3.265 to 3.294 e V for the deposited Zn O thin film at 300 and 350°C, respectively. The electrical resistivity measured of our films are in the order 0.36 cm. | Yacine Aoun Boubaker Benhaoua Brahim Gasmi Said Benramache | 2015 | Journal of Semiconductors2015，36，1： | 2 |
| 4 | Microwave annealing effects on ZnO films deposited by atomic layer deposition显示文摘Zinc oxide thin films deposited on glass substrate at 150°C by atomic layer deposition were annealed by the microwave method at temperatures below 500 °C.The microwave annealing effects on the structural and luminescent properties of ZnO films have been investigated by X-ray diffraction and photoluminescence.The results show that the MWA process can increase the crystal quality of ZnO thin films with a lower annealing temperature than RTA and relatively decrease the green luminescence of ZnO films.The observed changes have demonstrated that MWA is a viable technique for improving the crystalline quality of ZnO thin film on glass. | 赵士瑞 董亚斌 于明岩 郭晓龙 徐昕伟 景玉鹏 夏洋 | 2014 | Journal of Semiconductors2014，35，11： | 0 |
| 5 | The calculation of band gap energy in zinc oxide films显示文摘We investigated the optical properties of undoped zinc oxide thin films as the n-type semiconductor;the thin films were deposited at different precursor molarities by ultrasonic spray and spray pyrolysis techniques.The thin films were deposited at different substrate temperatures ranging between 200 and 500°C. In this paper, we present a new approach to control the optical gap energy of ZnO thin films by concentration of the ZnO solution and substrate temperatures from experimental data, which were published in international journals. The model proposed to calculate the band gap energy with the Urbach energy was investigated. The relation between the experimental data and theoretical calculation suggests that the band gap energies are predominantly estimated by the Urbach energies, film transparency, and concentration of the ZnO solution and substrate temperatures. The measurements by these proposal models are in qualitative agreements with the experimental data; the correlation coefficient values were varied in the range 0.96–0.99999, indicating high quality representation of data based on Equation(2), so that the relative errors of all calculation are smaller than 4%. Thus, one can suppose that the undoped ZnO thin films are chemically purer and have many fewer defects and less disorder owing to an almost complete chemical decomposition and contained higher optical band gap energy. | Ali Arif Okba Belahssen Salim Gareh Said Benramache | 2015 | Journal of Semiconductors2015，36，1： | 0 |
| 6 | Effect of band gap energy on the electrical conductivity in doped ZnO thin film显示文摘The transparent conductive pure and doped zinc oxide thin films with aluminum, cobalt and indium were deposited by ultrasonic spray technique on glass substrate at 350 C. This paper is to present a new approach to the description of correlation between electrical conductivity and optical gap energy with dopants' concentration of Al, Co and In. The correlation between the electrical and optical properties with doping level suggests that the electrical conductivity of the films is predominantly estimated by the band gap energy and the concentrations of Al, Co and In. The measurement in the electrical conductivity of doped films with correlation is equal to the experimental value, the error of this correlation is smaller than 13%. The minimum error value was estimated in the cobalt-doped ZnO thin films. This result indicates that such Co-doped ZnO thin films are chemically purer and have far fewer defects and less disorder owing to an almost complete chemical decomposition. | Said Benramache Okba Belahssen Hachemi Ben Temam | 2014 | Journal of Semiconductors2014，35，7： | 0 |
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