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| 1 | 退火对Ga_2O_3薄膜特性的影响显示文摘采用金属有机物化学气相沉积法在c面蓝宝石衬底上生长了高质量的β-Ga_2O_3薄膜,并将样品分别在真空、氧气、氮气氛围下退火30 min,研究了各类退火工艺对Ga_2O_3薄膜特性的影响,对退火所得的薄膜进行了X射线衍射、光致发光谱、紫外透射谱和原子力显微镜扫描的研究。结果表明,各类退火工艺均能够优化薄膜的晶体质量和表面形貌,同时有效改善了薄膜的光学性质。其中,氧气退火后的样品在可见光波段透射率高达83%,且吸收边更加陡峭;表面粗糙度降至0.564 nm,其表面更为平整。这些结果说明氧气退火对晶体质量的提高最为显著。氮气、真空退火的样品在光致发光谱中出现365 nm的发光峰,这是大量氧空位的存在导致的。 | 马征征 董鑫 庄仕伟 许恒 胡大强 | 2017 | 发光学报2017，38，5： | 11 |
| 2 | The impact of solvent and modifier on ZnO thin-film transistors fabricated by sol-gel process显示文摘Techniques for fabricating solution-processed zinc oxide(ZnO)-based thin-film transistors(TFTs)are feasible with solution using various routes.Here,ZnO TFTs were fabricated via sol-gel method using zinc acetate as the starting reagent with different modifiers and solvents.The ZnO thin-film semiconductors with well-controlled,preferential crystal orientation and densely packed ZnO crystals can be prepared with the optimized fabrication conditions,exhibiting excellent field-effect far exceeding those of hydrogenated amorphous silicon(a-Si:H).However,the field-effect characteristics of ZnO TFTs were different for different precursor systems which were constituted by zinc acetate,modifiers and solvents.The co-modification of acetoin and monoethanolamine for the precursor system exhibited higher extent of crystal orientation and field-effect.The maximum mobility of 7.65 cm2V-1s-1 and current on-to-off ratio of^105–106 have been obtained. | DONG YinMao TANG DongYan LI ChenSha | 2014 | Science China(Technological Sciences)2014，57，11： | 1 |
| 3 | A single-photon fault-detection method for nanocircuits that use GaN material显示文摘As the complexity of nanocircuits continues to increase,developing tests for them becomes more difficult.Failure analysis and the localization of internal test points within nanocircuits are already more difficult than for conventional integrated circuits.In this paper,a new method of testing for faults in nanocircuits is presented that uses single-photon detection to locate failed components(or failed signal lines)by utilizing the infrared photon emission characteristics of circuits.The emitted photons,which can carry information about circuit structure,can aid the understanding of circuit properties and locating faults.In this paper,in order to enhance the strength of emitted photons from circuit components,test vectors are designed for circuits’components or signal lines.These test vectors can cause components to produce signal transitions or switching behaviors according to their positions,thereby increasing the strength of the emitted photons.A multiple-valued decision diagram(MDD),in the form of a directed acrylic graph,is used to produce the test vectors.After an MDD corresponding to a circuit is constructed,the test vectors are generated by searching for specific paths in the MDD of that circuit.Experimental results show that many types of faults such as stuck-at faults,bridging faults,crosstalk faults,and others,can be detected with this method. | PAN ZhongLiang CHEN Ling ZHANG GuangZhao WU PeiHeng | 2014 | Science China(Technological Sciences)2014，57，2： | 1 |
| 4 | Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium显示文摘The Zn O layer with thickness of 1.6 μm in Zn O/Zn Ga2O4 composite structure was grown by the thermal oxidation of Zn S substrate with gallium. The optical property of the Zn O thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton(D0X) and donor-acceptor pair(DAP) emission peaks with large full-width at half-maximums(FWHMs) at 3.367 and 3.318 e V, respectively, at 10 K. However, the intensity of the D0 X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K. | YANG Qing ZHOU Xiao Hong NUKUI Takao SAEKI Yu IZUMI Sotaro TACKEUCHI Atsushi TATSUOKA Hirokazu LIANG Shu Hua | 2014 | Science China(Technological Sciences)2014，57，12： | 0 |
| 5 | 蒺藜状Cu掺Zn氧化物纳米颗粒的制备及表征显示文摘以Zn(NO3)2为前驱体、PVP为包覆剂,在碱性条件下掺杂Cu(NO3)2,制备800—2000nm量级的蒺藜状ZnO颗粒和ZnO/Cu(OH):的复合物,蒺藜状ZnO颗粒由ZnO纳米片构成,Cu(OH)2纳米棒长约50nin,直径约15nm。Cu2+的掺杂减小了ZnO/Cu(OH)2颗粒尺寸,Cu^2+在复合纳米颗粒的生长中起催化作用。经500℃退火,ZnO/Cu(OH)。复合物转变为ZuO/CnO复合物,其中蒺藜状ZnO颗粒基本维持原貌,Cu(OH)2纳米棒转化成CuO纳米颗粒。对制备的微/纳米材料进行了XRD、TEM和UV—Vis表征,结果表明掺杂20%Cu^2+时,ZnO/Cu(OH)2和ZnO/CuO复合纳米颗粒尺寸均匀、分散性好。退火前后ZnO颗粒在紫外可见区域均具有宽吸收带,带隙约为2.200eV和2.268eV,这与蒺藜状纳米颗粒独特的形貌导致表面大量。空位和Zn间隙有关。Cu^2+的掺杂使ZnO的吸收谱变窄,ZnO/Cu(OH)2和ZnO/CuO复合纳米颗的带隙均大于纯ZnO的带隙,原因是Cu^2+进入ZnO的晶格使。空位和Zn间隙减少,从而使导带向高能方向移动,电子跃迁宽度增大,带隙增大。 | 张文哲 杨爱玲 包西昌 | 2016 | 纳米科技2016，15，1： | 0 |
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