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| 1 | Properties of boron doped ZnO films prepared by reactive sputtering method: Application to amorphous silicon thin film solar cells显示文摘Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer. | Sukanta Bose Sourav Mandal Asok K.Barua Sumita Mukhopadhyay | 2020 | Journal of Materials Science & Technology2020，52，20： | 6 |
| 2 | Structural, optical and electrical properties of ZnO: B thin films with different thickness for bifacial a-Si:H/c-Si heterojunction solar cells显示文摘 | Dong XU Sheng YIN Xiangbin ZENG Song YANG Xixing WEN | 2017 | Frontiers of Optoelectronics2017，10，1： | 1 |
| 3 | Effect of metal-fingers/doped-ZnO transparent electrode on performance of GaN/InGaN solar cell显示文摘The effect of doped-ZnO transparent conductive oxide(TCO) with metal(Ag)-fingers contact on Ga N/In Ga N solar cell is investigated through numerical simulations. An optical and electrical analysis of different dopant elements(such as B, Al, Ga, In and Sn) with ZnO as a top TCO layer is studied. A comparative analysis of metal square pad electrode, metal grid pattern electrode and metal-finger/ZnO type electrodes are taken into consideration to ensure the effect of anti-reflectivity by ZnO. The effect of thickness of ZnO and i-In GaN layer on performance of solar cell is also studied in detail. The proposed solar cell structure with Ag-fingers/ZnO:Al as top contact electrode shows interesting device characteristics compared to other dopants and metal top electrodes.The device achieves open circuit voltage ~2.525 V, short circuit current ~4.256 mA/cm^2, fill factor ~87.86% and efficiency ~9.22% under 1 Sun, air mass 1.5 global illumination. | S.R.Routray T.R.Lenka | 2017 | Journal of Semiconductors2017，38，9： | 0 |
| 4 | ZnO@Fe3O4多级孔结构的制备及其性能研究显示文摘通过溶胶-凝胶法制备了具有磁性的ZnO@Fe3O4多级孔结构。采用X-射线衍射(XRD)和扫描电子显微镜(SEM)对ZnO@Fe3O4结构的物相及微观形貌进行分析,采用N2吸附脱附(BET)分析其孔径分布,采用物理测试系统(PPMS)测定了其磁性。结果表明:所制备的ZnO@Fe3O4结构仍属于纤锌矿,颗粒的粒度约20nm;整个结构的孔径分布范围较广,最大孔径达到了主要集中在20~100nm范围内,属于多级孔范畴。PPMS测试结果表明制备的多级孔结构具有铁磁性,最大饱和磁矩可达5.18emu/mg。 | 唐灵芝 孙强 孙师泽 李振华 杨惠芳 任书霞 | 2019 | 石家庄铁道大学学报(自然科学版)2019，32，2： | 0 |
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