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| 1 | 溶胶-凝胶法制备Ag掺杂的ZnO薄膜及其结构和光学性能的研究(英文)显示文摘溶胶-凝胶法制备了Ag掺杂的ZnO薄膜(AZO)。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、UV-VIS分光光度计、光致发光检测研究了掺杂浓度和退火温度对AZO薄膜光学和结构的影响。AZO薄膜呈(002)择优生长的纤维锌矿六角形结构的多晶相。0.5%和1%Ag掺杂的薄膜在可见光波长区域光学透过率在70%~80%之间,随着Ag掺杂浓度的升高平均透过率有所降低。5%Ag掺杂的ZnO薄膜经空气中700℃退火后出现两条发射光谱带,经He气氛中退火后UV发射光谱显著增强,并且可见光发射光谱随之消失。 | 年洪恩 申月 任秀峰 李翔 海春喜 云强 | 2014 | 人工晶体学报2014，43，7： | 2 |
| 2 | Double-peaked decay of transient photovoltage in nanoporous ZnO/n-Si photodetector显示文摘In the present work,a nanoporous ZnO/n-Si structure has been proposed as a new type infrared photodetector.Triggered by one laser pulse with wavelength of 1064 nm,this structure exhibits a double-peak decay of transient photovoltage.Also,the time interval between these two peaks increases linearly with the increase of irradiated pulsed energy,indicating the promising application of this hetero-junction in photo-energy detection of infrared pulsed laser.A possible mechanism for this particular photoresponse has been discussed. | LIU Hao FU Cheng ZHAO Kun | 2014 | Science China(Physics,Mechanics & Astronomy)2014，57，6： | 1 |
| 3 | High sensitive and ultrafast UV photodetector based on ZrO_2 single crystals显示文摘The fast-response ultraviolet (UV) photoelectric effect in ZrO2 single crystals with interdigitated electrodes has been investigated experimentally at room temperature. The photovoltage of ZrO2 single crystals exhibits a linear dependence on applied bias and light power density. The photocurrent responsivity to the UV light with a wavelength of 253.65 nm is 9.8 mA/W. For the photovoltaic pulse, a rise time of 501 ps and a full width at half maximum of 1.5 ns have been obtained, when the ZrO2 single crystal is illuminated by a 266 nm pulsed laser. These results indicate that the ZrO2 single crystal is a promising candidate for UV photodetectors. | XING Jie GUO ErJia LU HuiBin | 2011 | Science China(Physics,Mechanics & Astronomy)2011，54，8： | 1 |
| 4 | Preparation and optoelectronic properties of a-IGZO thin films deposited by RF magnetron sputtering at different working pressures显示文摘Transparent oxide semiconductor, a-IGZO, thin films were prepared by high-vacuum RF magnetron sputtering at different working pressures. The effect of working pressure on crystal structure, surface morphology, and electrical and optical properties of the films was studied.The highest hall mobility of 17.45 cm^2·V^(-1)·s^(-1) is obtained at 0.3 Pa with annealing at 200 ℃, while the highest carrier concentration of 2.32× 1020 cm^(-3) and the lowest resistivity of 0.001568 Ω-cm are obtained at 0.45 Pa with annealing. The highest transmittance of 90.9 % is obtained at 0.9 Pa with annealing treatment. A 'blue shift' of UV absorption edge is observed with the increase of working pressure. | Rui-Xin Ma Yu-Qin Xiao Shi-Na Li Yuan-Yuan Wang Dong-Ran Li Liang-Wei He | 2018 | Rare Metals2018，37，7： | 1 |
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