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| 1 | Dependence of the stability of organic light-emitting diodes on driving mode显示文摘We investigated the effects of pulsed current (PC) and direct current (DC) driving modes on the stability of organic light-emitting diodes with and without hole-injection layers (HILs).Two different HIL materials were used:copper phthalocyanine (CuPc) and 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MDTATA).It was found that the half-lives of devices using PC driving modes were different from those of comparable devices using DC driving modes.For the devices without HILs,with CuPc HILs and with MTDATA HILs,the half-lives of the devices were changed by factors of 1.91,1.41 and 0.86,respectively,when operated in PC rather than DC driving modes.Our analysis of the electrical characteristics of the corresponding hole-only devices showed that the number of holes injected into devices was greatly reduced by inserting an m-MTDATA layer compared with other designs.The results indicate that different ratios of injected electrons and holes can be obtained in these devices.Moreover,these ratios play a dominant role in the dependence of the stability of the device on the driving mode. | ZHANG WenWen WU ZhaoXin ZHANG XinWen LIANG ShiXiong JIAO Bo HOU Xun | 2011 | Chinese Science Bulletin2011，56，21： | 4 |
| 2 | 自加热效应下AlGaInN电子阻挡层对LED性能的影响显示文摘在自加热效应下,对有、无AlGaInN电子阻挡层的两种发光二极管芯片进行了数值研究系统分析了芯片能带结构,载流子输运与分布特性,内部焦耳热和复合热特性,内量子效率衰落的物理机制,并讨论了不同俄偈复合系数在自加热效应下对效率衰落效应的影响.模拟结果表明:当在p-GaN层与活性层间插入AlGaInN电子阻挡层后,效率衰落效应得到显著改善,芯片结温明显升高.俄偈复合热不是内热源的主要贡献,可忽略不计.效率衰落效应受芯片结温影响不大,电子漏电流与俄偈复合是效率衰落的主要原因. | 王天虎 徐进良 王晓东 | 2014 | 科学通报2014，59，16： | 2 |
| 3 | Self-heating dependent characteristic of GaN-based light-emitting diodes with and without AlGaInN electron blocking layer显示文摘In this study,GaN-based light-emitting diodes(LEDs)with and without AlGaInN electron blocking layer(EBL)under self-heating effect are numerically studied.The energy band diagram,carrier transport and distribution characteristics,internal Joule heat and non-radiative recombination heat characteristics,and internal quantum efficiency are investigated.The effect of Auger recombination coefficient on efficiency droop under self-heating effect is also studied.The simulation results show that efficiency droop is markedly improved when an AlGaInN EBL is placed between p-type GaN layer and active region.However,the chip temperature of LED is significantly increased simultaneously.The results also indicate that Auger recombination can be neglected because it is not the major contributor for the internal heat source.The efficiency droop is unrelated to the internal heat source.However,both electron leakage and Auger recombination play important roles in efficiency droop mechanism under self-heating effect. | Tianhu Wang Jinliang Xu Xiaodong Wang | 2014 | Chinese Science Bulletin2014，59，20： | 0 |
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