维普期刊资源整合服务平台（V6.5）

维普中文期刊产品整合服务

共被期刊论文引用了2次 您的检索式：您选中1篇文献正在查看引证文献汇总

选中清除导出查看参考文献查看引证文献引用追踪共1页首页上一页第1页下一页末页 /1 跳转

		题名	作者	年代	出处	被引量
	1	Combining a multi deposition multi annealing technique with a scavenging(Ti) to improve the high-k/metal gate stack performance for a gate-last process显示文摘ALD Hf O2 films fabricated by a novel multi deposition multi annealing(MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing(D&A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer.This improvement strongly correlates with the cycle number of D&A(while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme.	张淑祥杨红唐波唐兆云徐烨峰许静闫江	2014	Journal of Semiconductors2014，35，10：	0
	2	Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation显示文摘The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.	Endi Suhendi Lilik Hasanah Dadi Rusdiana Fatimah A. Noor Neny Kurniasih Khairurrijal	2019	Journal of Semiconductors2019，40，6：	0

返回顶部每页显示：

共1页首页上一页第1页下一页末页 /1 跳转

goolge学术搜索-维普

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1　渝公网安备 50019002500403号　违法和不良信息举报中心

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费