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| 1 | Nanoscale potential barrier distributions and their effect on current transport in Ni/n type Si Schottky diode显示文摘We have experimentally studied the Ni/n-Si nano Schottky barrier height(SBH) and potential difference between patches in the nano Schottky diodes(SD) using contact atomic force microscopy(C-AFM) in tapping mode and scanning tunneling microscopy(STM). Topology measurement of the surface with C-AFM showed that,a single Ni/n-Si SD consists of many patches with different sizes. These patches are sets of parallel diodes and electrically interacting contacts of 5 to 50 nm sizes and between these individual diodes, there exists an additional electric field. In real metal semiconductor contacts(MSC), patches with quite different configurations, various geometrical sizes and local work functions were randomly distributed on the surface of the metal. The direction and intensity of the additional electric field are distributed in homogenously along the contact metal surface. SBH controls the electronic transport across the MS interface and therefore, is of vital importance to the successful operation of semiconductor devices. | M.Yeganeh N.Balkanian Sh.Rahmatallahpur | 2015 | Journal of Semiconductors2015，36，12： | 0 |
| 2 | Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors显示文摘The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β-Ga_(2)O_(3) thin film by metalorganic chemical vapor deposition method to construct planar Ti/β-Ga2O3/Ni Schottky photodiode detectors with different onstate resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W^(-1),specific detectivity of 10^(14) Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/β-Ga_(2)O_(3) and Ni/β-Ga_(2)O_(3) interfaces, but contributing to higher electric current flow both in the dark and under illuminations. | LIU Zeng ZHI YuSong ZHANG ShaoHui LI Shan YAN ZuYong GAO Ang ZHANG ShiYu GUO DaoYou WANG Jun WU ZhenPing LI PeiGang TANG WeiHua | 2021 | Science China(Technological Sciences)2021，64，1： | 0 |
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