|
|
|
题名
|
作者
|
年代
|
出处
|
被引量
|
| 1 | Comparison of electronic structure between monolayer silicenes on Ag(111)显示文摘√√The electronic structures of monolayer silicenes(4 × 4 and■×■R13.9o) grown on Ag(111) surface are studied by scanning tunneling spectroscopy(STS) and density functional theory(DFT) calculations. While both phases have similar electronic structures around the Fermi level, significant differences are observed in the higher energy unoccupied states.The DFT calculations show that the contributions of Si 3pz orbitals to the unoccupied states are different because of their different buckled configurations. | Chun-Liang Lin Ryuichi Arafune Maki Kawai Noriaki Takagi | 2015 | Chinese Physics B2015,24,8: | 1 |
| 2 | Fabrication and properties of silicene and silicene–graphene layered structures on Ir(111)显示文摘Silicene, a two-dimensional(2D) honeycomb structure similar to graphene, has been successfully fabricated on various substrates. This work will mainly review the syntheses and the corresponding prope√rties o√f silicene and√ silice√ne–graphene layered structures on Ir(111) substrates. For silicene on Ir(111), the buckled(3 ×3) silicene/(7 ×7)Ir(111) configuration and its electronic structure are fully discussed. For silicene–graphene layered structures, silicene layer can be constructed underneath graphene layer by an intercalation method. These results indicate the possibility of integrating silicene with graphene and may link up with potential applications in nanoelectronics and related areas. | 孟蕾 王业亮 张理智 杜世萱 高鸿钧 | 2015 | Chinese Physics B2015,24,8: | 1 |
| 3 | Growth mechanism and modification of electronic and magnetic properties of silicene显示文摘Silicene, a monolayer of silicon atoms arranged in a honeycomb lattice, has been undergoing rapid development in recent years due to its superior electronic properties and its compatibility with mature silicon-based semiconductor technology. The successful synthesis of silicene on several substrates provides a solid foundation for the use of silicene in future microelectronic devices. In this review, we discuss the growth mechanism of silicene on an Ag(111) surface, which is crucial for achieving high quality silicene. Several critical issues related to the electronic properties of silicene are also summarized, including the point defect effect, substrate effect, intercalation of alkali metal, and alloying with transition metals. | 柳洪盛 韩楠楠 赵纪军 | 2015 | Chinese Physics B2015,24,8: | 1 |
| 4 | Silicene:from monolayer to multilayer——A concise review显示文摘Silicene, a newly isolated silicon allotrope with a two-dimensional(2D) honeycomb lattice structure, is predicted to have electronic properties similar to those of graphene, including the existence of signature Dirac fermions. Furthermore,the strong spin–orbit interaction of Si atoms potentially makes silicene an experimentally accessible 2D topological insulator. Since 2012, silicene films have been experimentally synthesized on Ag(111) and other substrates, motivating a burst of research on silicene. We and collaborators have employed STM investigations and first principles calculations to intensively study the structure and electronic properties of silicene films on Ag(111), including monolayer, bilayer, and multilayer silicenes, as well as hydrogenation of silicene. | 李晖 付会霞 孟胜 | 2015 | Chinese Physics B2015,24,8: | 0 |
| 5 | A review of the growth and structures of silicene on Ag(111)显示文摘Ag(111) is currently the most often used substrate for growing silicene films. Silicene forms a variety of different phases on the Ag(111) substrate. However, the structures of these phases are still not fully understood so far. In this brief review we summarize the growth condition and resulting silicene phases on Ag(111), and discuss the most plausible structural model and electronic property of individual phases. The existing debates on silicene on Ag(111) system are clarified as mush as possible. | 吴克辉 | 2015 | Chinese Physics B2015,24,8: | 0 |
| 6 | Silicene on substrates:A theoretical perspective显示文摘Silicene, as the silicon analog of graphene, is successfully fabricated by epitaxially growing it on various substrates.Like free-standing graphene, free-standing silicene possesses a honeycomb structure and Dirac-cone-shaped energy band,resulting in many fascinating properties such as high carrier mobility, quantum spin Hall effect, quantum anomalous Hall effect, and quantum valley Hall effect. The existence of the honeycomb crystal structure and the Dirac cone of silicene is crucial for observation of its intrinsic properties. In this review, we systematically discuss the substrate effects on the atomic structure and electronic properties of silicene from a theoretical point of view, especially with emphasis on the changes of the Dirac cone. | 钟红霞 屈贺如歌 王洋洋 史俊杰 吕劲 | 2015 | Chinese Physics B2015,24,8: | 0 |
| 7 | Electronic structure of silicene显示文摘In this topical review, we discuss the electronic structure of free-standing silicene by comparing results obtained using different theoretical methods. Silicene is a single atomic layer of silicon similar to graphene. The interest in silicene is the same as for graphene, in being two-dimensional and possessing a Dirac cone. One advantage of silicene is due to its compatibility with current silicon electronics. Both empirical and first-principles techniques have been used to study the electronic properties of silicene. We will provide a brief overview of the parameter space for first-principles calculations.However, since the theory is standard, no extensive discussion will be included. Instead, we will emphasize what empirical methods can provide to such investigations and the current state of these theories. Finally, we will review the properties computed using both types of theories for free-standing silicene, with emphasis on areas where we have contributed.Comparisons to graphene is provided throughout. | 刘祿昌 | 2015 | Chinese Physics B2015,24,8: | 0 |