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| 1 | Interactions of zinc and cadmium toxicity in their effects on growth and in antioxidative systems in tomato plants (Solanum lycopersicum)显示文摘The interaction between zinc and cadmium was investigated in tomato plants (Solanum lycopersicum). Ten-day-old seedlings were treated with 10 μmol/L CdCl 2 associated to different concentrations of ZnCl 2 (10, 50, 100, and 150 μmol/L). Zn supply clearly reduced Cd accumulation in leaves and simultaneously increased Zn concentration. Cd induced oxidative stress in leaves as indicated by an increase in thiobarbituric acid-reactive substances (TBARS) level and chlorophyll breakdown. Furthermore, compared with control, Cd-treated plants had significantly higher activities of superoxide dismutase (SOD, EC 1.15.1.1), whereas, catalase (CAT, EC 1.111.1.6), ascorbate peroxidase (APX, EC 1.11.1.11), and glutathione reductase (GR, EC 1.6.4.2) activities were significantly suppressed by Cd addition. Zn supplementation, at low level, restored and enhanced the functional activity of these enzymes (SOD, CAT, APX and GR) as compared to Cd-alone-treated plants. The beneficial effect of adequate Zn level on Cd toxicity was confirmed by a significant decrease in TBARS level and restoration of chlorophyll content. However, when Zn was added at high level in combination with Cd there was an accumulation of oxidative stress, which was higher than that for Cd or excess Zn alone treatments. These results suggested that higher Zn concentrations and Cd are synergistic in their effect on plant growth parameters and oxidative stress. | Jaouhra Cherif Chamseddine Mediouni Wided Ben Ammar Fatma Jemal | 2011 | Journal of Environmental Sciences2011，23，5： | 19 |
| 2 | Valence band structure of strained Si/(111)Si_(1-x)Ge_x显示文摘The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1-xGex, the valence band and hole effective mass along the [111] and [-110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [-110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation. | SONG JianJun, ZHANG HeMing, HU HuiYong, DAI XianYing & XUAN RongXi Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China | 2010 | Science China(Physics,Mechanics & Astronomy)2010，53，3： | 9 |
| 3 | Finite element analysis and optimization of temperature field in GaN-MOCVD reactor显示文摘The electromagnetic field distribution of the in-home GaN-MOCVD reactor heated by induction was simulated by using finite element method (FEM), and the distributions of the magnetic field and the joule heat in the graphite susceptor were obtained. Then the distribution of joule heat was used as the applied load for the simulation of temperature. Based on heat conduction and heat emission models, the temperature distribution in the reactor and the susceptor were gained. In order to improve the uniformity of the temperature on the top surface of the susceptor, the conventional concentric placement of the susceptor in the reactor was changed into the eccentric placement, which effectively improved the temperature uniformity and increased the heat efficiency. | ZHANG JinCheng, LI ZhiMing, HAO Yue , WANG Hao & LI PeiXian Key Laboratory of Fundamental Science for National Defense on Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China | 2010 | Science China(Information Sciences)2010，53，10： | 7 |
| 4 | Improved electrical properties of the two-dimensional electron gas in AlGaN/GaN heterostructures using high temperature AlN interlayers显示文摘The electrical properties of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures using high temperature (HT) AlN interlayers (ITs) grown on c-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD) have been investigated.It is found that the electrical properties (electron mobility and sheet carrier density) are improved compared with those in the conventional AlGaN/GaN heterostructures without HT AlN ITs,and the improved 2DEG properties result in the reduction of the sheet resistance.The results from high resolution X-ray diffraction (HRXRD) and Raman spectroscopy measurements show that HT AlN ITs increase the in-plane compressive strain in the upper GaN layer,which enhances the piezoelectric polarization in it and consequently causes increasing of 2DEG density at the AlGaN/GaN interface.Meanwhile,the compressive strain induced by HT AlN ITs leads to a less tensile strain in AlGaN barrier layer and causes positive and negative effects on the sheet carrier density of 2DEG,which counteract each other.The HT AlN ITs reduce the lattice mismatch between the GaN and AlGaN layers and smooth the interface between them,thus increasing the electric mobility of 2DEG by weakening the alloy-related interface roughness and scattering.In addition,the surface morphology of AlGaN/GaN heterostructures is improved by the insertion of HT AlN ITs.The reason for the improved properties is discussed in this paper. | XUE JunShuai,HAO Yue,ZHANG JinCheng & NI JinYu Key Laboratory of Wide Band-Gap Semiconductors and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China | 2010 | Science China(Technological Sciences)2010，53，6： | 4 |
| 5 | Study of GaN MOS-HEMT using ultrathin Al_2O_3 dielectric grown by atomic layer deposition显示文摘We report on a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) using atomic-layer deposited (ALD) Al2O3 as the gate dielectric. Through further decreasing the thickness of the gate oxide to 3.5 nm and optimizing the device fabrication process,a device with maximum transconductance of 150 mS/mm was produced. The drain current of this 0.8 μm gate-length MOS-HEMT could reach 800 mA/mm at +3.0 V gate bias. Compared to a conventional AlGaN/GaN HEMT of similar design,better interface property,lower leakage current,and smaller capacitance-voltage (C-V) hysteresis were obtained,and the superiority of this MOS-HEMT device structure with ALD Al2O3 gate dielectric was exhibited. | YUE YuanZheng,HAO Yue,FENG Qian,ZHANG JinCheng,MA XiaoHua & NI JinYu Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi’an 710071,China | 2009 | Science China(Technological Sciences)2009，52，9： | 2 |
| 6 | Kinetics of the Anti-oxidant Response to Salinity in the Halophyte Cakile maritima显示文摘在抗氧化剂酶(超级氧化物 dismutase ,过氧化氢酶(猫),过氧化物酶(邮政部门), ascorbate 过氧化物酶( APX ), monodehydroascorbate reductase , dehydroascorbate reductase ( DHAR ),和 glutathionereductase ( GR ))的活动的 NaCI 应力的效果,抗氧化剂分子( ascorbate 和谷胱甘肽),并且氧化应力( malondialdehyde ( MDA ),电解质漏,和 H_2O_2 集中)的参数在 Cakilemaritima 被调查,沿着突尼斯的海岸经常的盐土植物。幼苗面对盐(100, 200,和 400 mmol/L NaCI ) 被种。植物在 20 天周期性地被收获。生长面对 0-100 mmol/L NaCI 是最大的。在 400 mmol/L NaCI,生长显著地减少了。C 的 Thesalt 忍耐。在中等咸度, maritima 与氧化应力的最低价值 oftheparameters 陈述语气被联系,也就是,邮政部门,猫, APX, DHAR, andGR 和高织物的最高的活动 ascorbate 和谷胱甘肽满足。然而,延长了暴露到高咸度在 anti-oxidantactivities 和高 MDA 导致了减少内容,电解质漏,和 H_2O_2 集中。这些结果建议 anti-oxidantsystems 参予 C 的忍耐。maritima 将节制咸度。 | Nader Ben Amor Ana Jimenez Wided Megdiche Marianne Lundqvist Francisca Sevilla Chedly Abdelly | 2007 | Journal of Integrative Plant Biology2007，49，7： | 2 |
| 7 | Spectrofluorimetric determination of hydrogen peroxide scavenging activity 显示文摘 | Par zdzioch-Czochra M Wide' nska A | 2002 | Analytica Chimica Acta2002，，452： | 1 |
| 8 | Serum cystatinC for assessment of glomeralar filtration rateinpregnant and nonpregnant women显示文摘 | Strevens H Wide - Swensson D Torffvit O | 2002 | Scand J Clin Lab Invest2002，62，： | 1 |
| 9 | What can our patients actually use? 显示文摘 | Bernstam E V Shelton D M Walji M Instruments to assess the quality of health information on the World Wide Web | 2005 | International Journal of Medical Informatics2005，74，1： | 1 |
| 10 | An electronic tongue based on voltammetry显示文摘 | Winquist F Wide P Lundstrom I | 1997 | nalytica Chimica Acta1997，357，1： | 1 |
| 11 | Serum cystatinC is abetter marker for preeclamp siathan serumcreatinineor serumurate 显示文摘 | Strevens H Wide - Swensson D Grubb A | 2001 | Scand J Clin Lab Invest2001，61，： | 1 |
| 12 | Serum levels of thyroid hormones as biological markers in a Swedish forensic psychiatric population 显示文摘 | Stlenheim EG yon Knorring L Wide L | 1998 | Biol Psychiatry1998，43，10： | 1 |
| 13 | Response of anemia in rh-eumatoid arthritis to treatment with subcutaneous recombinant human erythropoietin 显示文摘 | Gudbjornsson B Hallgren R Wide L | 1992 | Ann Rheum Dis1992，51，6： | 1 |
| 14 | High prevalence of polycystic ovaries and associated clinical,endocrine,and metabolic features in women with previous gestational diabetes mellitus显示文摘 | Holte J Gennarelli G Wide L | 1998 | Endocrinol Metab1998，83，： | 1 |
| 15 | An electronic tongue based on voltammetry 显示文摘 | Winquist F Wide P | 1997 | Analytica Chimica Acta1997，357，： | 1 |
| 16 | Diffusion tensor imaging in the corpus callosum in children after moderate to severe traumatic brain injury显示文摘 | Wide EA Chu Z Bigter ED | 2006 | J Neurotrauma2006，23，10： | 1 |
| 17 | Spasticity and its association with functioning and health-related quality of life 18 months after stroke显示文摘 | Welmer AK von Arbin M Wide′n Holmqvist L | | 0，，： | 1 |
| 18 | Major malformations in infants exposed to antiepileptic drugs in utero, with emphasis on carbamzepine and valproic acid: a nation-wide population-based register study显示文摘 | Wide K Windbladh B Kallen B | 2004 | Acta Paediatr2004，93，： | 1 |
| 19 | An electronic tongue based on voltammetry显示文摘 | Winquist F Wide P Lundstrom I | 1997 | Analytica Chimica Acta1997，357，： | 1 |
| 20 | Screening of algal strains for metal removal capabilities 显示文摘 | RADWAY J C WIDE E W WHITAKER M J | 2001 | Journal of Applied Phyeology2001，13，5： | 1 |
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