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| 1 | 甲烷浓度对CVD金刚石薄膜晶体学生长过程的影响显示文摘采用X射线衍射技术、电子背散射衍射技术和扫描电镜分别观察了不同甲烷浓度条件下沉积的CVD自支撑金刚石薄膜的宏观织构、微区晶界分布和表面形貌.研究了金刚石晶体{100}面和{111}面生长的晶体学过程.研究表明,{100}面通过吸附活性基团CH2 2-,而{111}面通过交替吸附活性基团CH3 -和CH3-后脱氢堆积碳原子.低甲烷浓度时,{111}面表面能低于{100}面,使{111}面生长略快于{100}面.甲烷浓度升高,动力学作用增强使{100}面生长明显快于{111}面,使金刚石薄膜产生{100}纤维织构;同时显露的{100}面平行于薄膜表面,竞争生长使位于晶体侧面的{111}面由于相互覆盖而减小,形成了不同于单晶体自由生长的薄膜表面形貌组织. | 朱宏喜 毛卫民 冯惠平 吕反修 Vlasov I I Ralchenko V G Khomich A V | 2007 | 无机材料学报2007，22，3： | 9 |
| 2 | High-rate growth of single crystal diamond in microwave plasma in hydrogen/methane and argon/hydrogen/methane gas mixtures in presence of intensive soot formation 显示文摘 | BOLSHAKOV A P RALCHENKO V G | 2016 | Diamond and related materials2016，62，： | 1 |
| 3 | Diamond deposition on steel with CVD tungsten intermediate layer显示文摘 | Ralchenko V G Smolin A A Pereverzev V G | 1995 | Diamond and Related Materials1995，4，： | 1 |
| 4 | Nanocry-stalline diamond films : transmission electron microscopy andRaman spectroscopy characterization显示文摘 | Nistor L C Landuyt J V Ralchenko V G | 1997 | Diamond and RelatedMaterials1997，6，1： | 1 |
| 5 | Analysis of intrinsic stress distribution in grains of high quality CVD diamond film by micro-Raman spectroscopy显示文摘 | Vlasov I I Ralchenko V G Obraztsova E D | 1997 | Thin Solid Films1997，，： | 1 |
| 6 | Analysis of Intrinsic Stress Distribution in Grains of High Quality CVD Diamond Film by Micro-Raman Spectroscopy 显示文摘 | Vlasov I I Ralchenko V G Obraztsova E D | 1997 | Thin Solid Films1997，308，309： | 1 |
| 7 | Diamond Deposition on Steel with CVD Tungsten Intermediate Layer 显示文摘 | Ralchenko V G Smolin A A Pereverzev V G | 1995 | Diamond and Related Materials1995，4，： | 1 |
| 8 | Ablation of CVD Diamond with Nanosecond Laser Pulses of UV--IR Range显示文摘 | Kononenko T V Ralchenko V G Vlasov I I | 1998 | Diamond and Related Materials1998，7，1112： | 1 |
| 9 | Thermal conductivity of diamond composites sintered under high pressures显示文摘 | EKIMOV E A SUETIN N V POPOVICH A F RALCHENKO V G | 2008 | Diamond and Related Materials2008，17，45： | 1 |
| 10 | Photoluminescence of Si-vaeancy color centers in diamond films grown in microwave plasma in methane-hydrogen-silane mixtures 显示文摘 | Sedov V S Ralchenko V G Vlasov I I | 2014 | Bull Labeled Phys Inst2014，41，12： | 1 |
| 11 | Nanocrystalline diamond films: Transmission electron microscopy and Raman spectroscopy characterization 显示文摘 | NISTOR L C VAN LANDUYT J RALCHENKO V G | 1997 | Diamond and Related Materials1997，6，1： | 1 |
| 12 | 显示文摘 | Smolin A A | 1995 | Diamond and Related Materials1995，4，： | 1 |
| 13 | Laser processing of diamond films显示文摘 | Ralchenko V G Pimenov S M | 1997 | Diamond Films Technol1997，7，1： | 1 |
| 14 | Diamond Deposition on Steel with CVD Tungsten Intermediate Layer显示文摘 | Ralchenko V G Smolin A A Pereverzev V G | 1995 | Diamond and Related Materials1995，4，： | 1 |
| 15 | Ablation of CVD diamond with nanosecond laser pulses of UV-IR range显示文摘 | Kononenko T V Ralchenko V G Vlasov I I | 1998 | Diamond and Related Materials1998，，7： | 1 |
| 16 | Diamond deposition on steel with CVD tungsten intermediate layer 显示文摘 | Ralchenko V G Smolin A A Pereverzev V G | 1995 | Diamond and Related Materials1995，4，： | 1 |
| 17 | Thermal conductivity of diamond composites sin- tered under high pressure 显示文摘 | Ekimov E A Suetin N V Popovich A F Ralchenko V G | 2008 | Diamond & Related Ma- terials2008，17，4： | 1 |
| 18 | Diamond deposition on steel with CVD tungsten intermediate layer 显示文摘 | RALCHENKO V G SMOLIN A A PEREVERZEV V G OBRAZTSOVA E D KOROTOUSHENKO K G KONOV V I LAKHOTKIN Y V LOUBNIN E N | 1995 | Diamond and Related Materials1995，4，56： | 1 |
| 19 | Technical Phys Lett显示文摘 | Garin B M Parshin V V Ralchenko V G | 1999 | 25:2881999，25，： | 1 |
| 20 | Growth of 4" diameter polycrystailine diamond wafers with high thermal conductivity by 915 MHz microwave plasma chemical vapor deposition显示文摘Polycrystalline diamond(PCD) films 100 mm in diameter are grown by 915 MHz microwave plasma chemical vapor deposition(MPCVD) at different process parameters,and their thermal conductivity(TC) is evaluated by a laser flash technique(LFT) in the temperature range of230-380 K.The phase purity and quality of the films are assessed by micro-Raman spectroscopy based on the diamond Raman peak width and the amorphous carbon(a-C) presence in the spectra.Decreasing and increasing dependencies for TC with temperature are found for high and low quality samples,respectively.TC,as high as 1950 ± 230 W m^(-1) K^(-1) at room temperature,is measured for the most perfect material.A linear correlation between the TC at room temperature and the fraction of the diamond component in the Raman spectrum for the films is established. | A F POPOVICH V G RALCHENKO V K BALLA A K MALLIK A A KHOMICH A P BOLSHAKOV D N SOVYK E E ASHKINAZI V Yu YUROV | 2017 | Plasma Science and Technology2017，19，3： | 1 |
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