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38篇 您的检索式：作者名="Polyakov Y A"

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	题名	作者	年代	出处	被引量
1	Deep traps responsible for hysteresis in capacitance-voltage characteristics of AIGaN / GaN heterostructure tran- sistors 显示文摘	Polyakov A Y Smirnov N B Govorkov A V	2007	App Phys Lett2007，91，23：	1
2	X-Ray Diffraction Determination of the Fractions of Hexagonal and Twinned Phase in Cubic GaN Layers Grown on GaAs (001)Substrate显示文摘	Polyakov A Y Govorkov A V Smirnov N B	2001	Solid-state Electronics2001，45，：	1
3	Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb 显示文摘	Polyakov A Y Milnes A G Smimov N B	1993	Solid - State Electronics1993，36，10：	1
4	Electrical and optical properties of Cr and Fe implanted n-GaN 显示文摘	Polyakov A Y Smirnov N B Govorkov A V	2003	Appl Phys2003，93，：	1
5	X- Ray Diffraction Determination of the Fractions of Hexagonal and Twinned Phase in Cubic GaN Layers Grown on (001) GaAs Substrate显示文摘	Govorkov A V Smirnov N B	2001	Solid state electronics2001，45，：	1
6	Nonpolar GaN Grown on Si by Hydride Vapor Phase Epitaxy Using Anodized Al Nanomask显示文摘	Polyakov A Y Markov A V Mezhennyi M V	2009	Appl Phys Lett2009，94，02：	1
7	Optical and magnetic properties of ZnO crystals implanted with Cr and Fe显示文摘	Polyakov A Y Govorkov A V Smimov N B	2004	Materials Science in Semiconductor Processing2004，5，7：	1
8	X-Ray Diffraction Determination of the Fractions of Hexagonal and Twinned Phase in Cubic GaN Layers Grown on GaAs(001)Substrate显示文摘	Polyakov A Y Govorkov A V Smirnov N B	2001	Solid-state Electronics2001，45，：	1
9	显示文摘	Polyakov A Y Govorkov A V Smirnov N B	2004	Mat Sci Semicon Proc2004，7，：	1
10	X-Ray Diffraction Determination of the Fractions of Hexagonal and Twinned Phase in Cubic GaN Layers Grown on (001) GaAs Substrate显示文摘	Govorkov A V Smirnov N B Nikolaev A E Nikitina I P Ditriev V A	2001	Solid State Electronics2001，45，：	1
11	Studies of the Origin of the Yellow Luminescence Band, theNature of Nonradiative Recombination and the Origin of Persistent Photoeonductivity in N-GaN Films显示文摘	Polyakov A Y Smirnov N B Usikov A S	1998	Solide-state Electronies1998，42，11：	1
12	Electrochemical synthesis of niobium(V) ethylate显示文摘	BEREZKIN M Y CHERNYKH I N POLYAKOV E G TOMILOV A P	2006	Applied Electrochemistry and Corrosion Protection of Metals2006，79，5：	1
13	Properties of highly Cr-doped A1N 显示文摘	Polyakov A Y Smirnov N B Govorkov A V	2004	Appl Phys Lett2004，85，：	1
14	Hydrogen plasma passivation effects on properties of p-Ga N显示文摘	POLYAKOV A Y SMIRNOV N B GOVORKOV A V	2003	J Appl Phys2003，92，：	1
15	Deep centers in AlGaN-based light emitting diode structures 显示文摘	Polyakov A Y Smirnov N B Govorkov A V	1999	Solid-State Electronics1999，43，10：	1
16	X-ray diffraction determination of the fractions of hexagonal and twinned phase in cubic GaN layers grown on GaAs (001) substrate 显示文摘	POLYAKOV A Y GOVORKOV A V SMIRNOV N B	2001	Solid-State Electronics2001，45，2：	1
17	Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-A1GaN/GaN heterostructures显示文摘	Polyakov A Y Smirnov N B Govorkov A V	2005	J Appl Phys2005，98，03：	1
18	显示文摘	Polyakov A Y Govorkov	2001	Solid-State Electronics2001，45，：	1
19	Annealing effects on electrical properties of MgZnO films grown by pulsed laser deposition显示文摘	Polyakov A Y Smirnov N B Govorkov A V	2008	J Appl Phys2008，103，08：	1
20	X-Ray Diffraction Determination of the Fractions of Hexagonal and Twinned Phase in Cubic GaN Layers Grown on (001) GaAs Substrate显示文摘	Polyakov A Y Govorkov A V Smirnov N B Nikolaev A E Nikitina I P Ditriev V A	2001	Solid-State Electronics2001，45，：	1

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