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67篇 您的检索式:作者名="Pertsev"
    题名 作者 年代 出处 被引量
1Grain-boundary effect on the Curie-Weiss Law of ferroelectric ceramics and polycrystalline thin films: calculation by the method of effective medium 显示文摘EMELYANOV A Y PERTSEV N A HOFFMANN-EIFERT S 2002Journal of Electroceramics2002,9,:1
2Thickness dependence of intrinsic dielectric response and appar- ent interfacial capacitance in ferroelectric thin films显示文摘PERTSEV N A DITTMANN R PLONKA R 2007J Appl Phys2007,101,07:1
3Crust- al evolution of island-arc ultramafic magma: Galmoenan pyroxenite-dunite plutonic complex, Koryak Highland (Far East Russia) 显示文摘Batanova V G Pertsev A N Kamenetsky V S 2005Journal of Petrology2005,46,7:1
4Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric 显示文摘Pertsev N A Zembilgotov A G Tagantsev A K 1998Thin Films Phys Rev Lett1998,80,9:1
5Polarization Instability in Polydomain Ferroelectric Epitaxial Thin Films and the Formation of Heterophase Structures 显示文摘Pertsev N A Kukhar V G 2000Phys Rev Lett2000,84,:1
6Curie-Weiss-type Law for the Strain and Stress Effects on the Dielectric Response of Ferroelectric Thin Films 显示文摘Pertsev N A Kukhar V G Waser R 2000Appl Phys Lett2000,77,:1
7Magnetoresistive memory with uhralow critical current for magnetization switching 显示文摘Pertsev N A Kohlstedt H 2012Advanced Functional Materials2012,22,22:1
8Magnetic tunnel junction on a ferroelectric substrate 显示文摘Pertsev N A Kohlstedt H 2009Applied Physics Letters2009,95,16:1
9Effect of mechanical boundary conditions on phase diagrams of eptiaxial ferroelectric thtn film显示文摘PERTSEV N A ZEMBILGOTOV A G TAGANTSEV A K 1998Phys Rev Lett1998,80,9:1
10Theoretical current-voltage characteristics of ferroelec- tric tunnel junctions 显示文摘KOHLSTEDT H PERTSEV N A CONTRERAS J R 2005Phys Rev B2005,72,12:1
11Ferroelectric thin films grown on tensile substrates: Renormalization of the Curie-Weiss law and apparent absence of ferroelectricity 显示文摘Pertsev N A Zembilgotov A G Hoffmann S J Appl Phys0,85,3:1
12Elastic stabilization of a single-domain ferroelectric state in nanoscale capacitors and tunnel junctions 显示文摘Pertsev N A Kohlstedt H 2007Phys Rev Lett2007,98,25:1
13Effect of mechanical boundary conditions on phase diagrams of epitaxial ferroelectric thin films 显示文摘PERTSEV N A ZEMBILGOTOV TAGANTSEV A K 1998Phys Rev Lett1998,80,9:1
14Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films显示文摘Pertsev N A Zembilgotov A G Tagantsev A K 1998Phys Rev Lett1998,80,:1
15Phase diagrams and physical properties of single domain ep-itaxial Pb(Zr1-xTix)O3thin films显示文摘PERTSEV N A KUKHAR V G KOHLSTEDT H 2003Phys Rev B2003,67,:1
16Crossing an interface : Ferroelectric control of tunnel currents in mag- netic complex oxide heterostructures 显示文摘Hambe M Petraru A Pertsev N A 2010Advanced Functional Materials2010,20,15:1
17Phase Diagrams and Physical Properties of Single-Domain Epitaxial Pb ( Zr1-xTi ) O3 Thin Films显示文摘Pertsev N A Kukhar V G Kohlstedt H 2003Phys Rev B2003,67,05:1
18Ultrathin epitaxial ferroelectric films grown on compressive substrates: competition between the surface and strain effects 显示文摘ZEMBILGOTOV A G PERTSEV N A KOHLSTEDT H 2002J Appl Phys2002,91,4:1
19Effect of mechanical boundary conditions on phase dia grams of epitaxial ferroelectric thin films显示文摘PERTSEV N A ZEMBILGOTOV A G TAGANTSEV A K 1998Phys Rev Lett1998,80,:1
20显示文摘Pertsev N A Zembilgotov A G Tagantsev A K 1998Phys Rev Lett1998,80,:1
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