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166篇 您的检索式：期刊名="IEEE Transactions on Device Material Reliability"

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	题名	作者	年代	出处	被引量
1	Accelerated life test of high brightness light emitting diodes显示文摘	Trevisanello L Meneghini M Mura G	2008	IEEE Transactions on Device and Materials Reliability2008，8，2：	1
2	Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects 显示文摘	Tan C M ZhangG GanZ H	2004	IEEE Transactions on Device and Materials Reliability2004，4，3：	1
3	Performance degradation of high-brightness light emitting diodes under DC and pulsed bias显示文摘	Buso S Spiazzi G Meneqhinl M	2008	IEEE Transactions on Device and Materials Reliability2008，8，2：	1
4	IBM z990 soft error detection and recovery显示文摘	Meaney P J	2005	IEEE Transactions on Device and Materials Reliability2005，5，3：	1
5	Predicting the failure probability of device features in MEMS显示文摘	Pierce D M Zeyen B Huigens B M	2011	IEEE Transactions on Device and Materials Reliability2011，11，3：	1
6	A review on the ESD robustness of drain extended MOS devices显示文摘	SHRIVASTAVA M GOSSNER H	2012	IEEE Transactions on Device and Materials Reliability2012，12，4：	1
7	MOSFET linearity performance degradation subject to drain and gate voltage stress显示文摘	Yu C Yuan J S Yang H	2004	IEEE Transactions on Device and Materials Reliability2004，4，4：	1
8	MOSFET linearity performancedegradation subject to drain and gate voltage stress 显示文摘	YU C YUAN J S YANG H	2004	IEEE Transactions on Device and Materials Reliability2004，4，4：	1
9	Radiation-induced soft errors in advanced semiconductor technologies显示文摘	Baumann R C	2005	Device and Materials Reliability IEEE Transactions on2005，5，3：	1
10	A compact interface-trapped-charge-induced subthreshold current model for surrounding-gate MOSFETs显示文摘	Chiang T	2014	IEEE Transactions on Device and Materials Reliability2014，14，2：	1
11	Gold-Aluminum intermetallic formation kinetics显示文摘	BLISH R C LI S KINOSHITA H	2007	IEEE Transactions on Device and Materials Reliability2007，7，1：	1
12	Systematic characterization of integrated circuit standard components as stimulated by scanning laser beam 显示文摘	GLOWACKI A M BRAHMA S K SUZUKI H	2007	IEEE Transactions on Device and Materials Reliability2007，7，1：	1
13	Superior hot carrier reliability of single halo (SH) silicon - on - insulator(SOI) nMOSFET in analog applications 显示文摘	Hakim N Rao V R Vasi J	2005	IEEE Transactions on Device and Materials Reliability2005，5，1：	1
14	Thermal analysis of LED arrays for automotive headlamp with a novel cooling system显示文摘	Jang Sunho Shin Moo Whan	2008	IEEE Transactions on Device and Materials Reliability2008，，：	1
15	Component-level measurement for transient-induced latch-up in CMOS ICs under system-level ESD considerations显示文摘	KER Ming-dou HSU S F	2006	IEEE Transactions on Device and Materials Reliability2006，6，3：	1
16	Thermal and mechanical analysis of high-power LEDs with ceramic packages 显示文摘	HU J YANG L SHIN M W	2008	IEEE Transactions on Device and Materials Reliability2008，8，2：	1
17	Controlling short-channel effects in deep-submicron SOl MOSFETs for improved reliability: A review显示文摘	CHAUDHRY A KUMAR M J	2004	IEEE Transactions on Device and Materials Reliability2004，4，1：	1
18	New Low-leakage Power-rail ESD Clamp Circuit in a 65-nm Low-voltage CMOS Process显示文摘	Chiu P Y Ker M D	2011	IEEE Transactions on Device and Materials and Reliability2011，11，3：	1
19	A compact interface-trapped-charge-induced subthreshold current model for surrounding-gate MOSFETs显示文摘	Chiang T	2014	IEEE Transactions on Device and Materials Reliability2014，14，2：	1
20	Mechanisms of RF current collapse in A1GaN-GaN high electron mob- ility transistors显示文摘	Faqir M Verzellesi G Chini A	2008	IEEE Transactions on Device and Materials Reliability2008，8，2：	1

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